Development and design of single-electron transistors based on silicon-on-insulator silicon nanowires
This master’s thesis presents the design, fabrication, and characterization of multi-gate silicon-on-insulator (SOI) single-electron transistor (SET) devices, utilizing silicon nanowires as conduction channels. A precise micro- and nanofabrication process was developed, integrating optical and elect...
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| Tipo de recurso: | tesis de maestría |
| Fecha de publicación: | 2025 |
| País: | España |
| Institución: | Universitat Politècnica de Catalunya (UPC) |
| Repositorio: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglés |
| OAI Identifier: | oai:upcommons.upc.edu:2117/452211 |
| Acceso en línea: | https://hdl.handle.net/2117/452211 |
| Access Level: | acceso embargado |
| Palabra clave: | Transistors Silicon-on-insulator technology Electron beams Single-electron transistors Silicon nanowires Nanofabrication Microfabrication Lithography Silicon-on-insulator SET SOI Silici sobre aïllant, Tecnologia de Feixos electrònics Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors |
| Sumario: | This master’s thesis presents the design, fabrication, and characterization of multi-gate silicon-on-insulator (SOI) single-electron transistor (SET) devices, utilizing silicon nanowires as conduction channels. A precise micro- and nanofabrication process was developed, integrating optical and electron beam lithography, oxide growth, ion implantation, dry etching, and multi-step metallization. A complete mask set was designed to define source/drain regions, nanowire channels, metal gates, and alignment marks. Preliminary tests, such as rapid thermal annealing, were conducted to validate individual process steps. Additionally, TCAD simulations were used to support the interpretation of electrical behavior and guide design decisions. The successful definition of nanowires with nanometer-scale thickness demonstrates significant progress toward enabling quantum transport applications at the nanoscale. |
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