Charge carrier lifetime fluctuations and performance evaluation of Cu(In,Ga)Se2 absorbers via time-resolved-photoluminescence microscopy

The open-circuit voltage (VOC) is the main limitation to higher efficiencies of Cu(In,Ga)Se2 solar cells. One of the most critical parameters directly affecting VOC is the charge carrier lifetime. Therefore, it is essential to evaluate the extent to which inhomogeneities in material properties limit...

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Autores: Ochoa Gómez, Mario|||0000-0003-4870-7390, Yang, Shih-Chi, Nishiwaki, Shiro, Tiwari, Ayodhya Nath, Carron, Romain
Tipo de recurso: artículo
Fecha de publicación:2022
País:España
Institución:Universidad de Cantabria (UC)
Repositorio:UCrea Repositorio Abierto de la Universidad de Cantabria
Idioma:inglés
OAI Identifier:oai:repositorio.unican.es:10902/29134
Acceso en línea:https://hdl.handle.net/10902/29134
Access Level:acceso abierto
Palabra clave:Charge carrier lifetime
CIGS
Mapping
Open-circuit voltage
Radiative efficiency
Time-resolved photoluminescence
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spelling Charge carrier lifetime fluctuations and performance evaluation of Cu(In,Ga)Se2 absorbers via time-resolved-photoluminescence microscopyOchoa Gómez, Mario|||0000-0003-4870-7390 Yang, Shih-ChiNishiwaki, ShiroTiwari, Ayodhya NathCarron, RomainCharge carrier lifetimeCIGSMappingOpen-circuit voltageRadiative efficiencyTime-resolved photoluminescenceThe open-circuit voltage (VOC) is the main limitation to higher efficiencies of Cu(In,Ga)Se2 solar cells. One of the most critical parameters directly affecting VOC is the charge carrier lifetime. Therefore, it is essential to evaluate the extent to which inhomogeneities in material properties limit the carrier lifetime and how postdeposition treatments (PDTs) and growth conditions affect material properties. Time-resolved photoluminescence (TRPL) microscopy is employed at conditions similar to one sun to study carrier lifetime fluctuations in Cu(In,Ga)Se2 with light (Na) and heavy (Rb) alkalis, different substrates, and grown at different temperatures. PDT lowers the amplitude of minority carrier lifetime fluctuations, especially for Rb-treated samples. Upon PDT, the grains’ carrier lifetime increases, and the analysis suggests a reduction in grain boundary recombination. Furthermore, lifetime fluctuations have a small impact on device performance, whereas VOC calculated from TRPL (and continuous-wave PL) agrees with device values within the limits of investigated PDT samples. Finally, up to about half a per cent external radiative efficiencies are experimentally determined from TRPL metrics, and internal radiative efficiencies are approximated. The findings demonstrate that the highest absorber material quality investigated is still limited by nonradiative recombination (grain or grain boundary) and is comparable to state-of-the-art absorbers.This work received financial support in part from the Swiss State Secretary for Education, Research and Innovation (SERI) under Contract No. 17.00105 (EMPIR project HyMet) and from the Swiss Federal Office of Energy (SFOE) (SI/501614-01 ‘‘ImproCIS''). The EMPIR programme was cofinanced by the Participating States and by the European Union's Horizon 2020 research and innovation programme.Wiley-Blackwell20222022-01-20journal articlehttp://purl.org/coar/resource_type/c_6501NAhttp://purl.org/coar/version/c_be7fb7dd8ff6fe43info:eu-repo/semantics/articlehttps://hdl.handle.net/10902/29134Advanced Energy Materials, 2022, 12(3), 2102800reponame:UCrea Repositorio Abierto de la Universidad de Cantabriainstname:Universidad de Cantabria (UC)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Attribution 4.0 Internationalhttp://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:repositorio.unican.es:10902/291342026-06-02T12:39:31Z
dc.title.none.fl_str_mv Charge carrier lifetime fluctuations and performance evaluation of Cu(In,Ga)Se2 absorbers via time-resolved-photoluminescence microscopy
title Charge carrier lifetime fluctuations and performance evaluation of Cu(In,Ga)Se2 absorbers via time-resolved-photoluminescence microscopy
spellingShingle Charge carrier lifetime fluctuations and performance evaluation of Cu(In,Ga)Se2 absorbers via time-resolved-photoluminescence microscopy
Ochoa Gómez, Mario|||0000-0003-4870-7390
Charge carrier lifetime
CIGS
Mapping
Open-circuit voltage
Radiative efficiency
Time-resolved photoluminescence
title_short Charge carrier lifetime fluctuations and performance evaluation of Cu(In,Ga)Se2 absorbers via time-resolved-photoluminescence microscopy
title_full Charge carrier lifetime fluctuations and performance evaluation of Cu(In,Ga)Se2 absorbers via time-resolved-photoluminescence microscopy
title_fullStr Charge carrier lifetime fluctuations and performance evaluation of Cu(In,Ga)Se2 absorbers via time-resolved-photoluminescence microscopy
title_full_unstemmed Charge carrier lifetime fluctuations and performance evaluation of Cu(In,Ga)Se2 absorbers via time-resolved-photoluminescence microscopy
title_sort Charge carrier lifetime fluctuations and performance evaluation of Cu(In,Ga)Se2 absorbers via time-resolved-photoluminescence microscopy
dc.creator.none.fl_str_mv Ochoa Gómez, Mario|||0000-0003-4870-7390
Yang, Shih-Chi
Nishiwaki, Shiro
Tiwari, Ayodhya Nath
Carron, Romain
author Ochoa Gómez, Mario|||0000-0003-4870-7390
author_facet Ochoa Gómez, Mario|||0000-0003-4870-7390
Yang, Shih-Chi
Nishiwaki, Shiro
Tiwari, Ayodhya Nath
Carron, Romain
author_role author
author2 Yang, Shih-Chi
Nishiwaki, Shiro
Tiwari, Ayodhya Nath
Carron, Romain
author2_role author
author
author
author
dc.subject.none.fl_str_mv Charge carrier lifetime
CIGS
Mapping
Open-circuit voltage
Radiative efficiency
Time-resolved photoluminescence
topic Charge carrier lifetime
CIGS
Mapping
Open-circuit voltage
Radiative efficiency
Time-resolved photoluminescence
description The open-circuit voltage (VOC) is the main limitation to higher efficiencies of Cu(In,Ga)Se2 solar cells. One of the most critical parameters directly affecting VOC is the charge carrier lifetime. Therefore, it is essential to evaluate the extent to which inhomogeneities in material properties limit the carrier lifetime and how postdeposition treatments (PDTs) and growth conditions affect material properties. Time-resolved photoluminescence (TRPL) microscopy is employed at conditions similar to one sun to study carrier lifetime fluctuations in Cu(In,Ga)Se2 with light (Na) and heavy (Rb) alkalis, different substrates, and grown at different temperatures. PDT lowers the amplitude of minority carrier lifetime fluctuations, especially for Rb-treated samples. Upon PDT, the grains’ carrier lifetime increases, and the analysis suggests a reduction in grain boundary recombination. Furthermore, lifetime fluctuations have a small impact on device performance, whereas VOC calculated from TRPL (and continuous-wave PL) agrees with device values within the limits of investigated PDT samples. Finally, up to about half a per cent external radiative efficiencies are experimentally determined from TRPL metrics, and internal radiative efficiencies are approximated. The findings demonstrate that the highest absorber material quality investigated is still limited by nonradiative recombination (grain or grain boundary) and is comparable to state-of-the-art absorbers.
publishDate 2022
dc.date.none.fl_str_mv 2022
2022-01-20
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
NA
http://purl.org/coar/version/c_be7fb7dd8ff6fe43
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/10902/29134
url https://hdl.handle.net/10902/29134
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution 4.0 International
http://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution 4.0 International
http://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Wiley-Blackwell
publisher.none.fl_str_mv Wiley-Blackwell
dc.source.none.fl_str_mv Advanced Energy Materials, 2022, 12(3), 2102800
reponame:UCrea Repositorio Abierto de la Universidad de Cantabria
instname:Universidad de Cantabria (UC)
instname_str Universidad de Cantabria (UC)
reponame_str UCrea Repositorio Abierto de la Universidad de Cantabria
collection UCrea Repositorio Abierto de la Universidad de Cantabria
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300719

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