Growth Study and Characterization of Single Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapor Deposition

Graphene was first isolated from graphite using the method called the tape by scientists at the University of Manchester (Andre Geim, Konstantin Novoselov); such work was later awarded the Nobel Prize in Physics (2010) highlighting its innovative contribution. Still, the method of the tape or mechan...

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Autor: Chaitoglou, Stefanos
Tipo de recurso: tesis doctoral
Estado:Versión publicada
Fecha de publicación:2016
País:España
Institución:CBUC, CESCA
Repositorio:TDR. Tesis Doctorales en Red
OAI Identifier:oai:www.tdx.cat:10803/400402
Acceso en línea:http://hdl.handle.net/10803/400402
Access Level:acceso abierto
Palabra clave:Grafè
Grafeno
Graphene
Deposició química en fase vapor
Deposición química de vapores
Chemical vapor deposition
53
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network_name_str España
repository_id_str
dc.title.none.fl_str_mv Growth Study and Characterization of Single Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapor Deposition
title Growth Study and Characterization of Single Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapor Deposition
spellingShingle Growth Study and Characterization of Single Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapor Deposition
Chaitoglou, Stefanos
Grafè
Grafeno
Graphene
Deposició química en fase vapor
Deposición química de vapores
Chemical vapor deposition
53
title_short Growth Study and Characterization of Single Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapor Deposition
title_full Growth Study and Characterization of Single Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapor Deposition
title_fullStr Growth Study and Characterization of Single Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapor Deposition
title_full_unstemmed Growth Study and Characterization of Single Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapor Deposition
title_sort Growth Study and Characterization of Single Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapor Deposition
dc.creator.none.fl_str_mv Chaitoglou, Stefanos
author Chaitoglou, Stefanos
author_facet Chaitoglou, Stefanos
author_role author
dc.contributor.none.fl_str_mv Bertrán Serra, Enric
Andújar Bella, José Luis
Universitat de Barcelona. Departament de Física Aplicada
dc.subject.none.fl_str_mv Grafè
Grafeno
Graphene
Deposició química en fase vapor
Deposición química de vapores
Chemical vapor deposition
53
topic Grafè
Grafeno
Graphene
Deposició química en fase vapor
Deposición química de vapores
Chemical vapor deposition
53
description Graphene was first isolated from graphite using the method called the tape by scientists at the University of Manchester (Andre Geim, Konstantin Novoselov); such work was later awarded the Nobel Prize in Physics (2010) highlighting its innovative contribution. Still, the method of the tape or mechanical exfoliation can not provide larger domains graphene some hundred micrometers. different technologies that could promote the synthesis of continuous layers of graphene large area in order to boost the potential for large-scale applications were needed. Synthesis chemical vapor deposition (CVD) on various metal substrates is probably the method that meets the above requirements. In the CVD technique, a precursor gas is introduced into a carbon furnace where the metal substrate is placed. The gas molecule decomposes and the carbon atoms are deposited on the metal surface. There are different factors that affect the growth of graphene: the selection of the metal substrate and the thickness thereof; the growth temperature, pressure and partial pressures of the precursor gas carbon / hydrogen / argon; and finally, the growth time. Considering the synthesis of graphene, the aim of the thesis lies present new experiments and results that demonstrate the effect of H2 partial pressure, through PCH4 / PH2 ratio between gas flows, on the growth of crystals dimensional graphene and morphology. To do this, we have designed an experimental methodology consisting of three experiments: 1) Application of a hydrogen plasma to reduce the copper substrate, rather than the regular process in the presence of hydrogen. 2) In relation to the growth of graphene, we propose an optimization experiment to determine control factors for a single continuous layer of graphene and graphene large single crystal domains. 3) intended to identify the role of partial pressure ratio, <PH2> / <PCH4>, and gas flow of hydrogen and methane have conducted experiments varying these parameters.
publishDate 2016
dc.date.none.fl_str_mv 2016
2017
2017
dc.type.none.fl_str_mv info:eu-repo/semantics/doctoralThesis
info:eu-repo/semantics/publishedVersion
format doctoralThesis
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10803/400402
url http://hdl.handle.net/10803/400402
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 252 p.
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Universitat de Barcelona
publisher.none.fl_str_mv Universitat de Barcelona
dc.source.none.fl_str_mv TDX (Tesis Doctorals en Xarxa)
reponame:TDR. Tesis Doctorales en Red
instname:CBUC, CESCA
instname_str CBUC, CESCA
reponame_str TDR. Tesis Doctorales en Red
collection TDR. Tesis Doctorales en Red
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869409883964571648
spelling Growth Study and Characterization of Single Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapor DepositionChaitoglou, StefanosGrafèGrafenoGrapheneDeposició química en fase vaporDeposición química de vaporesChemical vapor deposition53Graphene was first isolated from graphite using the method called the tape by scientists at the University of Manchester (Andre Geim, Konstantin Novoselov); such work was later awarded the Nobel Prize in Physics (2010) highlighting its innovative contribution. Still, the method of the tape or mechanical exfoliation can not provide larger domains graphene some hundred micrometers. different technologies that could promote the synthesis of continuous layers of graphene large area in order to boost the potential for large-scale applications were needed. Synthesis chemical vapor deposition (CVD) on various metal substrates is probably the method that meets the above requirements. In the CVD technique, a precursor gas is introduced into a carbon furnace where the metal substrate is placed. The gas molecule decomposes and the carbon atoms are deposited on the metal surface. There are different factors that affect the growth of graphene: the selection of the metal substrate and the thickness thereof; the growth temperature, pressure and partial pressures of the precursor gas carbon / hydrogen / argon; and finally, the growth time. Considering the synthesis of graphene, the aim of the thesis lies present new experiments and results that demonstrate the effect of H2 partial pressure, through PCH4 / PH2 ratio between gas flows, on the growth of crystals dimensional graphene and morphology. To do this, we have designed an experimental methodology consisting of three experiments: 1) Application of a hydrogen plasma to reduce the copper substrate, rather than the regular process in the presence of hydrogen. 2) In relation to the growth of graphene, we propose an optimization experiment to determine control factors for a single continuous layer of graphene and graphene large single crystal domains. 3) intended to identify the role of partial pressure ratio, <PH2> / <PCH4>, and gas flow of hydrogen and methane have conducted experiments varying these parameters.El grafeno fue aislado por primera vez a partir del grafito mediante el llamado método de la cinta adhesiva por científicos de la Universidad de Manchester (Andre Geim, Konstantin Novoselov); dicho trabajo fue posteriormente reconocido con el Premio Nobel en Física (2010) destacando su aportación innovadora. Aún así, el método de la cinta adhesiva o exfoliación mecánica no puede proporcionar dominios de grafeno mayores que algunos cientos de micrómetros. Eran necesarias diferentes tecnologías que pudieran promover la síntesis de capas de grafeno continuas de area grande con el fin de impulsar el potencial para aplicaciones a gran escala. La síntesis de deposición química en fase vapor (CVD) sobre diferentes sustratos metálicos es probablemente el método que cumple con los requisitos anteriores. En la técnica CVD, se introduce un gas precursor de carbono en un horno donde se coloca el sustrato metálico. La molécula de gas se descompone y los átomos de carbono se depositan sobre la superficie metálica. Existen diferentes factores que afectan el crecimiento del grafeno: la selección del sustrato del metal y el espesor de la misma; la temperatura de crecimiento, la presión, así como las presiones parciales del gas precursor del carbono / hidrógeno / argón; y, por último, el tiempo de crecimiento. Teniendo en cuenta la síntesis de grafeno, el objetivo de la tesis recae en presentar nuevos experimentos y resultados que evidencien el efecto de la presión parcial de H2, a través de la relación PCH4/PH2 entre los flujos de gas, sobre el crecimiento de cristales bidimensionales de grafeno y en su morfología. Para ello, hemos diseñado una metodología experimental que consiste en tres experimentos: 1)La aplicación de un plasma de hidrógeno para reducir el sustrato de cobre, en lugar del proceso regular en presencia de hidrógeno. 2)En relación con el crecimiento de grafeno, proponemos un experimento de optimización que determinen los factores de control para obtener una sola capa continua de grafeno y grandes dominios monocristalinos de grafeno. 3)Con la intención de identificar el papel de la relación de presiones parciales, <PH2> / <PCH4>, y el flujo de gas de hidrógeno y metano hemos llevado a cabo experimentos de la variación de estos parámetros.Universitat de BarcelonaBertrán Serra, EnricAndújar Bella, José LuisUniversitat de Barcelona. Departament de Física Aplicada201720172016info:eu-repo/semantics/doctoralThesisinfo:eu-repo/semantics/publishedVersion252 p.application/pdfapplication/pdfhttp://hdl.handle.net/10803/400402TDX (Tesis Doctorals en Xarxa)reponame:TDR. Tesis Doctorales en Redinstname:CBUC, CESCAInglésADVERTIMENT. L'accés als continguts d'aquesta tesi doctoral i la seva utilització ha de respectar els drets de la persona autora. Pot ser utilitzada per a consulta o estudi personal, així com en activitats o materials d'investigació i docència en els termes establerts a l'art. 32 del Text Refós de la Llei de Propietat Intel·lectual (RDL 1/1996). Per altres utilitzacions es requereix l'autorització prèvia i expressa de la persona autora. En qualsevol cas, en la utilització dels seus continguts caldrà indicar de forma clara el nom i cognoms de la persona autora i el títol de la tesi doctoral. No s'autoritza la seva reproducció o altres formes d'explotació efectuades amb finalitats de lucre ni la seva comunicació pública des d'un lloc aliè al servei TDX. Tampoc s'autoritza la presentació del seu contingut en una finestra o marc aliè a TDX (framing). Aquesta reserva de drets afecta tant als continguts de la tesi com als seus resums i índexs.info:eu-repo/semantics/openAccessoai:www.tdx.cat:10803/4004022026-06-14T12:46:07Z
score 15,300724

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