Growth Study and Characterization of Single Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapor Deposition
Graphene was first isolated from graphite using the method called the tape by scientists at the University of Manchester (Andre Geim, Konstantin Novoselov); such work was later awarded the Nobel Prize in Physics (2010) highlighting its innovative contribution. Still, the method of the tape or mechan...
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| Tipo de recurso: | tesis doctoral |
| Estado: | Versión publicada |
| Fecha de publicación: | 2016 |
| País: | España |
| Institución: | CBUC, CESCA |
| Repositorio: | TDR. Tesis Doctorales en Red |
| OAI Identifier: | oai:www.tdx.cat:10803/400402 |
| Acceso en línea: | http://hdl.handle.net/10803/400402 |
| Access Level: | acceso abierto |
| Palabra clave: | Grafè Grafeno Graphene Deposició química en fase vapor Deposición química de vapores Chemical vapor deposition 53 |
| Sumario: | Graphene was first isolated from graphite using the method called the tape by scientists at the University of Manchester (Andre Geim, Konstantin Novoselov); such work was later awarded the Nobel Prize in Physics (2010) highlighting its innovative contribution. Still, the method of the tape or mechanical exfoliation can not provide larger domains graphene some hundred micrometers. different technologies that could promote the synthesis of continuous layers of graphene large area in order to boost the potential for large-scale applications were needed. Synthesis chemical vapor deposition (CVD) on various metal substrates is probably the method that meets the above requirements. In the CVD technique, a precursor gas is introduced into a carbon furnace where the metal substrate is placed. The gas molecule decomposes and the carbon atoms are deposited on the metal surface. There are different factors that affect the growth of graphene: the selection of the metal substrate and the thickness thereof; the growth temperature, pressure and partial pressures of the precursor gas carbon / hydrogen / argon; and finally, the growth time. Considering the synthesis of graphene, the aim of the thesis lies present new experiments and results that demonstrate the effect of H2 partial pressure, through PCH4 / PH2 ratio between gas flows, on the growth of crystals dimensional graphene and morphology. To do this, we have designed an experimental methodology consisting of three experiments: 1) Application of a hydrogen plasma to reduce the copper substrate, rather than the regular process in the presence of hydrogen. 2) In relation to the growth of graphene, we propose an optimization experiment to determine control factors for a single continuous layer of graphene and graphene large single crystal domains. 3) intended to identify the role of partial pressure ratio, <PH2> / <PCH4>, and gas flow of hydrogen and methane have conducted experiments varying these parameters. |
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