Radiation hardness studies of neutron irradiated CMOS sensors fabricated in the ams H18 high voltage process
High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ωcenterdotcm were irradiated with neutrons up to a fluence of 2 × 1016 neq/cm2 and characterized using edge-TCT. It was found that, within the measured fluence range, the active...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2016 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/140414 |
| Acceso en línea: | http://hdl.handle.net/10261/140414 |
| Access Level: | acceso abierto |
| Palabra clave: | Radiation-hard electronics Hybrid detectors Radiation-hard detectors Radiation damage to detector materials (solid state) |
| Sumario: | High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10 Ωcenterdotcm were irradiated with neutrons up to a fluence of 2 × 1016 neq/cm2 and characterized using edge-TCT. It was found that, within the measured fluence range, the active region and the collected charge reach a maximum at about 7 × 1015 neq/cm2 to decrease to the level of the unirradiated detector after 2 × 1016 neq/cm2. |
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