Charge trapping analysis of Al<inf>2</inf>O<inf>3</inf> films deposited by atomic layer deposition using H<inf>2</inf>O or O<inf>3</inf> as oxidant
In this work, the authors focus on the charge trapping behavior of Al 2O3 layers deposited by atomic layer deposition. The goal is to give an insight into the effects of the oxidant source (H2O or O3) and the postdeposition anneal on the charging phenomena and the generation of new defects during el...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2013 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/378620 |
| Acceso en línea: | http://hdl.handle.net/10261/378620 https://api.elsevier.com/content/abstract/scopus_id/84872721973 |
| Access Level: | acceso abierto |
| Palabra clave: | Aluminum Atomic layer deposition Charge trapping Deposits Oxidants Electrical stress http://metadata.un.org/sdg/9 Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation |
| Sumario: | In this work, the authors focus on the charge trapping behavior of Al 2O3 layers deposited by atomic layer deposition. The goal is to give an insight into the effects of the oxidant source (H2O or O3) and the postdeposition anneal on the charging phenomena and the generation of new defects during electrical stress. For this purpose, current-voltage, capacitance-voltage, and conductance-voltage characteristics of Al/Al2O3/p-Si capacitors are analyzed before and after constant voltage stress and several phenomena such as the generation of neutral traps in the bulk dielectric, slow states, interface states, and charge trapping related degradation during the electrical stress are investigated. Finally, the impact of the oxidant source on the Al2O3 layer reliability is discussed. © 2013 American Vacuum Society. |
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