Charge trapping analysis of Al<inf>2</inf>O<inf>3</inf> films deposited by atomic layer deposition using H<inf>2</inf>O or O<inf>3</inf> as oxidant

In this work, the authors focus on the charge trapping behavior of Al 2O3 layers deposited by atomic layer deposition. The goal is to give an insight into the effects of the oxidant source (H2O or O3) and the postdeposition anneal on the charging phenomena and the generation of new defects during el...

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Detalles Bibliográficos
Autores: González, Mireia Bargalló, Rafí, Joan Marc, Beldarrain, Oihane, Zabala, Miguel, Campabadal, Francesca
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2013
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/378620
Acceso en línea:http://hdl.handle.net/10261/378620
https://api.elsevier.com/content/abstract/scopus_id/84872721973
Access Level:acceso abierto
Palabra clave:Aluminum
Atomic layer deposition
Charge trapping
Deposits
Oxidants
Electrical stress
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Descripción
Sumario:In this work, the authors focus on the charge trapping behavior of Al 2O3 layers deposited by atomic layer deposition. The goal is to give an insight into the effects of the oxidant source (H2O or O3) and the postdeposition anneal on the charging phenomena and the generation of new defects during electrical stress. For this purpose, current-voltage, capacitance-voltage, and conductance-voltage characteristics of Al/Al2O3/p-Si capacitors are analyzed before and after constant voltage stress and several phenomena such as the generation of neutral traps in the bulk dielectric, slow states, interface states, and charge trapping related degradation during the electrical stress are investigated. Finally, the impact of the oxidant source on the Al2O3 layer reliability is discussed. © 2013 American Vacuum Society.