Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs
For the growth of emerging graphene field effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time a physics-based compact model, which precisely describes the drain current (ID) fluctuations of monolayer GFETs. Physic...
| Autores: | , , , , , |
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| Tipo de documento: | artigo |
| Data de publicação: | 2025 |
| País: | España |
| Recursos: | Universitat Autònoma de Barcelona |
| Repositório: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglês |
| OAI Identifier: | oai:ddd.uab.cat:319813 |
| Acesso em linha: | https://ddd.uab.cat/record/319813 https://dx.doi.org/urn:doi:10.1109/TED.2025.3560616 |
| Access Level: | Acesso embargado |
| Palavra-chave: | Variability Compact model Graphene transistor (GFET) Carrier number fluctuation Coulomb scattering Circuit-design Impurities |
| Resumo: | For the growth of emerging graphene field effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time a physics-based compact model, which precisely describes the drain current (ID) fluctuations of monolayer GFETs. Physical mechanisms known to generate 1/f noise in transistors, such as carrier number and Coulomb scattering mobility fluctuations, are also revealed to cause (ID) variance. Such effects are considered in the model by being activated locally in the channel and the integration of their contributions from source to drain results in total variance. The proposed model is experimentally validated from a statistical population of three different-sized solution-gated (SG) GFETs from strong p- to strong n-type bias conditions. A series resistance (ID) variance model is also derived mainly contributing at high carrier densities. |
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