Characterization of high mobility inverted coplanar zinc nitride thin-film transistors
In this work, high mobility thin-film transistors based on zinc nitride (Zn3N2) sputtered at room temperature using spin-on glass (SOG) as gate dielectric are presented. The inverted coplanar structure is used for the Zn3N2 thin-film transistors. The devices exhibit an on/off-current ratio of 106 an...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Universidad Autónoma de Madrid |
| Repositorio: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.uam.es:10486/715739 |
| Acceso en línea: | http://hdl.handle.net/10486/715739 https://dx.doi.org/10.31349/REVMEXFIS.65.10 |
| Access Level: | acceso abierto |
| Palabra clave: | Room temperature thin-film transistors zinc nitride Física |
| Sumario: | In this work, high mobility thin-film transistors based on zinc nitride (Zn3N2) sputtered at room temperature using spin-on glass (SOG) as gate dielectric are presented. The inverted coplanar structure is used for the Zn3N2 thin-film transistors. The devices exhibit an on/off-current ratio of 106 and a subthreshold slope of 0.88 V/decade. The extracted field-effect mobility was 15.8 cm2/Vs which is among the highest reported for Zn3N2 thin-film transistors. In addition, n-type MOS capacitors were fabricated and characterized by capacitance-voltage and capacitance-frequency measurements to evaluate the dielectric characteristics of the SOG film |
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