Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication
A Solution Based Indium-Zinc-Oxide thin-film transistor (TFT) with a field-effect mobility of 0.58 cm2/Vs, a threshold voltage of 2.84 V by using pulse laser annealing processes. Indium-zinc-oxide (IZO) films with a low process temperature were deposited by sol-gel solution based method and KrF exci...
| Autores: | , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2015 |
| País: | México |
| Institución: | UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO |
| Repositorio: | Journal of Applied Research and Technology |
| Idioma: | inglés |
| OAI Identifier: | oai:ojs2.localhost:article/96 |
| Acceso en línea: | https://jart.icat.unam.mx/index.php/jart/article/view/96 |
| Access Level: | acceso abierto |
| Palabra clave: | Solution process Indium-zinc-oxide Thin-film transistor Excimer laser annealing |
| Sumario: | A Solution Based Indium-Zinc-Oxide thin-film transistor (TFT) with a field-effect mobility of 0.58 cm2/Vs, a threshold voltage of 2.84 V by using pulse laser annealing processes. Indium-zinc-oxide (IZO) films with a low process temperature were deposited by sol-gel solution based method and KrF excimer laser annealing (wavelength of 248 nm). Solution based indium-zinc-oxide (IZO) films usually needs high temperature about 500°C post annealing in a oven. KrF excimer laser annealing shows advantages of low temperature process, the less process time deceases to only few seconds was used to replace the high temperature process. IZO thin films suffering laser irradiation still keeps the amorphous film quality by transmission electron microscopy (TEM) diffraction pattern analysis. It could be expected this technology to large-area flexible display, in the future. All Rights Reserved © 2015 Universidad Nacional Autónoma de México, Centro de Ciencias Aplicadas y Desarrollo Tecnológico. This is an open access item distributed under the Creative Commons CC License BY-NC-ND 4.0. |
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