Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices

Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o‐HZO) ferroelectric crystallites coexist with grain boundaries between o‐HZO and a residual paraelectric monoclinic (m‐HZO) phase. These grain boundari...

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Autores: Sulzbach, Milena Cervo, Estandía, Saúl, Gázquez, Jaume, Sánchez Barrera, Florencio, Fina, Ignasi, Fontcuberta, Josep
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2020
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/230317
Acceso en línea:http://hdl.handle.net/10261/230317
Access Level:acceso abierto
Palabra clave:Ferroelectric tunnel junction
Hafnium oxide
Hf 0.5Zr 0.5O2
Resistive switching
Tunnel electroresistance
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spelling Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel DevicesSulzbach, Milena CervoEstandía, SaúlGázquez, JaumeSánchez Barrera, FlorencioFina, IgnasiFontcuberta, JosepFerroelectric tunnel junctionHafnium oxideHf 0.5Zr 0.5O2Resistive switchingTunnel electroresistanceFilms of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o‐HZO) ferroelectric crystallites coexist with grain boundaries between o‐HZO and a residual paraelectric monoclinic (m‐HZO) phase. These grain boundaries contribute to the resistive switching response in addition to the genuine ferroelectric polarization switching and have detrimental effects on device performance. Here, it is shown that, by using suitable nanometric capping layer deposited on HZO film, a radical improvement of the operation window of the tunnel device can be achieved. Crystalline SrTiO3 and amorphous AlOx are explored as capping layers. It is observed that these layers conformally coat the HZO surface and allow to increase the yield and homogeneity of ferroelectric junctions while strengthening endurance. Data show that the capping layers block ionic‐like transport channels across grain boundaries. It is suggested that they act as oxygen suppliers to the oxygen‐getters grain boundaries in HZO. In this scenario it could be envisaged that these and other oxides could also be explored and tested for fully compatible CMOS technologies.Financial support from the Spanish Ministry of Economy, Competitiveness and Universities, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV‐2015‐0496) and the MAT2017‐85232‐R (AEI/FEDER, EU), and MAT2015‐73839‐JIN projects, and from Generalitat de Catalunya (2017 SGR 1377) is acknowledged. M.C.S. acknowledges fellowship from “la Caixa Foundation” (ID 100010434; LCF/BQ/IN17/11620051). I.F. and J.G. acknowledge Ramón y Cajal contracts RYC‐2017‐22531 and RYC‐2012‐11709, respectively. S.E. acknowledges the Spanish Ministry of Economy, Competitiveness and Universities for his Ph.D. contract (SEV‐2015‐0496‐16‐3). M.C. work has been done as a part of her Ph.D. program in Physics at Universitat Autònoma de Barcelona. S.E. work has been done as a part of his Ph.D. program in Materials Science at Universitat Autònoma de Barcelona. Authors acknowledge the SEM‐FIB microscopy service of the Universidad de Málaga and the ICTS‐CNME for offering access to their instruments and expertise. Huan Tan is aknowledged for performing the AFM characterization.Peer reviewedWiley-VCHMinisterio de Economía y Competitividad (España)Generalitat de CatalunyaConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202120212020info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Postprintinfo:eu-repo/semantics/acceptedVersionhttp://hdl.handle.net/10261/230317reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/MAT2017‐85232‐Rinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2015‐73839‐JINhttp://dx.doi.org/10.1002/adfm.202002638Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2303172026-05-22T06:33:51Z
dc.title.none.fl_str_mv Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices
title Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices
spellingShingle Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices
Sulzbach, Milena Cervo
Ferroelectric tunnel junction
Hafnium oxide
Hf 0.5Zr 0.5O2
Resistive switching
Tunnel electroresistance
title_short Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices
title_full Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices
title_fullStr Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices
title_full_unstemmed Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices
title_sort Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices
dc.creator.none.fl_str_mv Sulzbach, Milena Cervo
Estandía, Saúl
Gázquez, Jaume
Sánchez Barrera, Florencio
Fina, Ignasi
Fontcuberta, Josep
author Sulzbach, Milena Cervo
author_facet Sulzbach, Milena Cervo
Estandía, Saúl
Gázquez, Jaume
Sánchez Barrera, Florencio
Fina, Ignasi
Fontcuberta, Josep
author_role author
author2 Estandía, Saúl
Gázquez, Jaume
Sánchez Barrera, Florencio
Fina, Ignasi
Fontcuberta, Josep
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Ministerio de Economía y Competitividad (España)
Generalitat de Catalunya
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Ferroelectric tunnel junction
Hafnium oxide
Hf 0.5Zr 0.5O2
Resistive switching
Tunnel electroresistance
topic Ferroelectric tunnel junction
Hafnium oxide
Hf 0.5Zr 0.5O2
Resistive switching
Tunnel electroresistance
description Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o‐HZO) ferroelectric crystallites coexist with grain boundaries between o‐HZO and a residual paraelectric monoclinic (m‐HZO) phase. These grain boundaries contribute to the resistive switching response in addition to the genuine ferroelectric polarization switching and have detrimental effects on device performance. Here, it is shown that, by using suitable nanometric capping layer deposited on HZO film, a radical improvement of the operation window of the tunnel device can be achieved. Crystalline SrTiO3 and amorphous AlOx are explored as capping layers. It is observed that these layers conformally coat the HZO surface and allow to increase the yield and homogeneity of ferroelectric junctions while strengthening endurance. Data show that the capping layers block ionic‐like transport channels across grain boundaries. It is suggested that they act as oxygen suppliers to the oxygen‐getters grain boundaries in HZO. In this scenario it could be envisaged that these and other oxides could also be explored and tested for fully compatible CMOS technologies.
publishDate 2020
dc.date.none.fl_str_mv 2020
2021
2021
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Postprint
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/230317
url http://hdl.handle.net/10261/230317
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/MAT2017‐85232‐R
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2015‐73839‐JIN
http://dx.doi.org/10.1002/adfm.202002638
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Wiley-VCH
publisher.none.fl_str_mv Wiley-VCH
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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