Sulzbach, M. C., Estandía, S., Gázquez, J., Sánchez Barrera, F., Fina, I., & Fontcuberta, J. (2020). Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices.
Citación estilo ChicagoSulzbach, Milena Cervo, Saúl Estandía, Jaume Gázquez, Florencio Sánchez Barrera, Ignasi Fina, y Josep Fontcuberta. Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices. 2020.
Cita MLASulzbach, Milena Cervo, et al. Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf0.5Zr0.5O2 Tunnel Devices. 2020.
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