Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique
Nd-doped GaSb bulk crystals with three different dopant concentrations have been grown by the vertical Bridgman technique. The axial segregation has been characterised by obtaining the effective segregation coefficient. Differences in the value of this coefficient show its dopant concentration depen...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2002 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/58929 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/58929 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Gallium-Phosphide Luminescence Silicon Ytterbium Gaas Inp Gap Física de materiales |
| Sumario: | Nd-doped GaSb bulk crystals with three different dopant concentrations have been grown by the vertical Bridgman technique. The axial segregation has been characterised by obtaining the effective segregation coefficient. Differences in the value of this coefficient show its dopant concentration dependence. Resistivity, carrier density and mobility have also been obtained showing the p-type nature of this material. Structural and compositional properties have been studied revealing some inclusions with high Nd concentration in the highest Nd-doped ingot. |
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