Relaxation and crystallization kinetics of amorphous germanium films by nanosecond laser pulses

Relaxation and crystallization of amorphous germanium films on silicon are induced by nanosecond laser pulses. Real time reflectivity measurements and Raman spectroscopy show that amorphous regrowth occurs upon melting and rapid solidification of the film because the thermal conductivity of the sili...

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Autores: Vega, Fidel, Serna, Rosalía, Afonso, Carmen N., Bermejo, Dionisio, Tejeda, Guzmán
Tipo de recurso: artículo
Fecha de publicación:1994
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/64854
Acceso en línea:http://hdl.handle.net/10261/64854
Access Level:acceso abierto
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spelling Relaxation and crystallization kinetics of amorphous germanium films by nanosecond laser pulsesVega, FidelSerna, RosalíaAfonso, Carmen N.Bermejo, DionisioTejeda, GuzmánTejeda, GuzmánRelaxation and crystallization of amorphous germanium films on silicon are induced by nanosecond laser pulses. Real time reflectivity measurements and Raman spectroscopy show that amorphous regrowth occurs upon melting and rapid solidification of the film because the thermal conductivity of the silicon substrate is high enough to extract the laser energy absorbed by the film in a very efficient way. The amorphous regrown film is in a relaxed state when compared to the as-grown amorphous material. Further pulses induce fast crystallization of the film. An increase of the melting threshold is found upon relaxation and crystallization of the film.This work was partially supported by CICY’I’ (Spain) under the TIC-93 program. Y. Garcia is thanked for valuable technical assistance. Peer ReviewedAmerican Institute of Physics2013201319942013info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501http://hdl.handle.net/10261/64854reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglésinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/648542026-05-22T06:33:51Z
dc.title.none.fl_str_mv Relaxation and crystallization kinetics of amorphous germanium films by nanosecond laser pulses
title Relaxation and crystallization kinetics of amorphous germanium films by nanosecond laser pulses
spellingShingle Relaxation and crystallization kinetics of amorphous germanium films by nanosecond laser pulses
Vega, Fidel
title_short Relaxation and crystallization kinetics of amorphous germanium films by nanosecond laser pulses
title_full Relaxation and crystallization kinetics of amorphous germanium films by nanosecond laser pulses
title_fullStr Relaxation and crystallization kinetics of amorphous germanium films by nanosecond laser pulses
title_full_unstemmed Relaxation and crystallization kinetics of amorphous germanium films by nanosecond laser pulses
title_sort Relaxation and crystallization kinetics of amorphous germanium films by nanosecond laser pulses
dc.creator.none.fl_str_mv Vega, Fidel
Serna, Rosalía
Afonso, Carmen N.
Bermejo, Dionisio
Tejeda, Guzmán
Tejeda, Guzmán
author Vega, Fidel
author_facet Vega, Fidel
Serna, Rosalía
Afonso, Carmen N.
Bermejo, Dionisio
Tejeda, Guzmán
author_role author
author2 Serna, Rosalía
Afonso, Carmen N.
Bermejo, Dionisio
Tejeda, Guzmán
author2_role author
author
author
author
description Relaxation and crystallization of amorphous germanium films on silicon are induced by nanosecond laser pulses. Real time reflectivity measurements and Raman spectroscopy show that amorphous regrowth occurs upon melting and rapid solidification of the film because the thermal conductivity of the silicon substrate is high enough to extract the laser energy absorbed by the film in a very efficient way. The amorphous regrown film is in a relaxed state when compared to the as-grown amorphous material. Further pulses induce fast crystallization of the film. An increase of the melting threshold is found upon relaxation and crystallization of the film.
publishDate 1994
dc.date.none.fl_str_mv 1994
2013
2013
2013
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/64854
url http://hdl.handle.net/10261/64854
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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