Epitaxial mosaic-like Mn5Ge3 thin films on Ge(001) substrates
Epitaxial mosaic-like Mn5Ge3 thin films were grown on Ge(001) substrates using reactive deposition epitaxy process from Mn deposition or Mn-Ge co-deposition at a substrate temperature of 250 °C using magnetron sputtering. The cross-sectional transmission electronic microscopy analyses reveal an abru...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2018 |
| País: | España |
| Institución: | Universidad de Castilla-La Mancha |
| Repositorio: | RUIdeRA. Repositorio Institucional de la UCLM |
| OAI Identifier: | oai:ruidera.uclm.es:10578/18291 |
| Acceso en línea: | http://hdl.handle.net/10578/18291 |
| Access Level: | acceso abierto |
| Palabra clave: | Mn5Ge3 Ge(001 Epitaxy Sputtering Synchrotron Magnetic properties |
| Sumario: | Epitaxial mosaic-like Mn5Ge3 thin films were grown on Ge(001) substrates using reactive deposition epitaxy process from Mn deposition or Mn-Ge co-deposition at a substrate temperature of 250 °C using magnetron sputtering. The cross-sectional transmission electronic microscopy analyses reveal an abrupt interface at the atomic scale; two equivalent epitaxial relationships are found between the substrate and the Mn5Ge3 crystallites: Ge(001)[110] and [0] Mn5Ge3()[0]. The chex axis of Mn5Ge3 forms an angle of 45° with the substrate plane. Rietveld analysis from a synchrotron 2-dimensional diffraction pattern revealed that remanent deformations of about 1% exist in the film. M-H measurements of 50-nm thick films elaborated by co-deposition revealed a saturation magnetization, Ms, of 636 kAm−1, whereas the films elaborated by Mn deposition saturate at different values depending on the orientation of the applied magnetic field: = 545 kAm−1 and = 774 kAm−1. This Ms difference is attributed to shape anisotropy of crystallites and interface quality of the films. |
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