Time- and space-resolved dynamics of ablation and optical breakdown induced by femtosecond laser pulses in indium phosphide

Femtosecond time-resolved microscopy has been used to analyze the structural transformation dynamics (melting, ablation, and solidification phenomena) induced by single intense 130 fs laser pulses in single-crystalline (100)-indium phosphide wafers in air on a time scale from ∼100 fs up to 8 ns. In...

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Detalles Bibliográficos
Autores: Bonse, J., Bachelier, G., Siegel, Jan, Solís Céspedes, Javier, Sturm, H.
Tipo de recurso: artículo
Fecha de publicación:2008
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/64950
Acceso en línea:http://hdl.handle.net/10261/64950
Access Level:acceso abierto
Descripción
Sumario:Femtosecond time-resolved microscopy has been used to analyze the structural transformation dynamics (melting, ablation, and solidification phenomena) induced by single intense 130 fs laser pulses in single-crystalline (100)-indium phosphide wafers in air on a time scale from ∼100 fs up to 8 ns. In the ablative regime close to the ablation threshold, transient surface reflectivity patterns are observed by fs microscopy on a ps to ns time scale as a consequence of the complex spatial density structure of the ablating material (dynamic Newton fringes). At higher fluences, exceeding six times the ablation threshold, optical breakdown causes another, more violent ablation regime, which reduces the energy deposition depth along with the time of significant material removal. As a consequence, ablation lasts longer in a ring-shaped region around the region of optical breakdown. This leads to the formation of a crater profile with a central protrusion. In the melting regime below the ablation threshold, the melting dynamics of indium phosphide has been quantified and subsequent superficial amorphization has been observed upon solidification on the ns time scale leading to amorphous layer thicknesses of the order of a few tens of nanometers. © 2008 American Institute of Physics.