Near-infrared and short-wavelength infrared photodiodes based on dye-perovskite composites
Organohalide perovskites have emerged as promising light-sensing materials because of their superior optoelectronic properties and low-cost processing methods. Recently, perovskite-based photodetectors have successfully been demonstrated as both broadband and narrowband varieties. However, the photo...
| Autores: | , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2017 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/105662 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/105662 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Dye Near-infrared Perovskite Photodiode Short-wavelength infrared Física del estado sólido 2211 Física del Estado Sólido |
| Sumario: | Organohalide perovskites have emerged as promising light-sensing materials because of their superior optoelectronic properties and low-cost processing methods. Recently, perovskite-based photodetectors have successfully been demonstrated as both broadband and narrowband varieties. However, the photodetection bandwidth in perovskite-based photodetectors has so far been limited to the near-infrared regime owing to the relatively wide band gap of hybrid organohalide perovskites. In particular, short-wavelength infrared photodiodes operating beyond 1 mu m have not yet been realized with organohalide perovskites. In this study, narrow band gap organic dyes are combined with hybrid perovskites to form composite films as active photoresponsive layers. Tuning the dye loading allows for optimization of the spectral response characteristics and excellent charge-carrier mobilities near 11 cm(2) V-1 s(-1), suggesting that these composites combine the light-absorbing properties or IR dyes with the outstanding charge-extraction characteristics of the perovskite. This study demonstrates the first perovskite photodiodes with deep near-infrared and short-wavelength infrared response that extends as far as 1.6 mu m. All devices are solution-processed and exhibit relatively high responsivity, low dark current, and fast response at room temperature, making this approach highly attractive for next-generation light-detection techniques. |
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