Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector
We report room-temperature operation of 1 x 1 cm(2) infrared photoconductive photodetectors based on silicon supersaturated with titanium. We have fabricated these Si-based infrared photodetectors devices by means of ion implantation followed by a pulsed laser melting process. A high sub-band gap re...
| Autores: | , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2014 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/33683 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/33683 |
| Access Level: | acceso abierto |
| Palabra clave: | 537 Transition Insulator Gold. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Sumario: | We report room-temperature operation of 1 x 1 cm(2) infrared photoconductive photodetectors based on silicon supersaturated with titanium. We have fabricated these Si-based infrared photodetectors devices by means of ion implantation followed by a pulsed laser melting process. A high sub-band gap responsivity of 34 mVW(-1) has been obtained operating at the useful telecommunication applications wavelength of 1.55 mu m (0.8 eV). The sub-band gap responsivity shows a cut-off frequency as high as 1.9 kHz. These Si-based devices exhibit a non-previous reported specific detectivity of 1.7 x 10(4) cm Hz(1/2) W-1 at 660Hz, under a 1.55 mu m wavelength light. This work shows the potential of Ti supersaturated Si as a fully CMOS-compatible material for the infrared photodetection technology. |
|---|