MgB2 cables made of thin wires manufactured by IMD process
This paper presents the properties of cables made of thin MgB2 wires with different sheaths manufactured by IMD process. Strong effect of the outer sheath on the J e(B) performance was observed and the best properties were obtained for the strongest Cu sheath. It was found that the transversal and l...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2020 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/214993 |
| Acceso en línea: | http://hdl.handle.net/10261/214993 |
| Access Level: | acceso abierto |
| Palabra clave: | Thin MgB2 wires IMD process Circular and flat cables Uniformity Critical currents Quench dynamics AC losses |
| Sumario: | This paper presents the properties of cables made of thin MgB2 wires with different sheaths manufactured by IMD process. Strong effect of the outer sheath on the J e(B) performance was observed and the best properties were obtained for the strongest Cu sheath. It was found that the transversal and longitudinal cables uniformity affects the critical currents in MgB2 wires made by IMD considerably. We have analyzed the quench dynamics in Rutherford cables with Al + 1.5%Al2O3 sheath, when subjected to heat disturbances. Quench triggered in the strands in direct contact with the heater, observing important delays in quench development among strands. Low AC losses were measured for the extra-light Rutherford cable with Ti barrier and Al + 1.5%Al2O3 sheath due to an increased barrier resisitivity and surface Al sheath oxidation, which reduces coupling current loss component effectivelly. |
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