MgB(2)cables made of thin wires manufactured by IMD process
This paper presents the properties of cables made of thin MgB(2)wires with different sheaths manufactured by IMD process. Strong effect of the outer sheath on theJ(e)(B) performance was observed and the best properties were obtained for the strongest Cu sheath. It was found that the transversal and...
| Autores: | , , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2020 |
| País: | España |
| Institución: | Universidad de Zaragoza |
| Repositorio: | Zaguán. Repositorio Digital de la Universidad de Zaragoza |
| OAI Identifier: | oai:zaguan.unizar.es:129329 |
| Acceso en línea: | http://zaguan.unizar.es/record/129329 |
| Access Level: | acceso abierto |
| Sumario: | This paper presents the properties of cables made of thin MgB(2)wires with different sheaths manufactured by IMD process. Strong effect of the outer sheath on theJ(e)(B) performance was observed and the best properties were obtained for the strongest Cu sheath. It was found that the transversal and longitudinal cables uniformity affects the critical currents in MgB(2)wires made by IMD considerably. We have analyzed the quench dynamics in Rutherford cables with Al + 1.5%A(l2)O(3)sheath, when subjected to heat disturbances. Quench triggered in the strands in direct contact with the heater, observing important delays in quench development among strands. Low AC losses were measured for the extra-light Rutherford cable with Ti barrier and Al + 1.5%Al(2)O(3)sheath due to an increased barrier resisitivity and surface Al sheath oxidation, which reduces coupling current loss component effectivelly. |
|---|