Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes

[EN]In this work, In0.53Ga0.47As planar Gunn diodes specifically designed for providing oscillations at frequencies below 30 GHz have been fabricated and characterized. Different types of measurements were used to define a set of consistent methods for the characterization of the oscillations that c...

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Autores: Lechaux, Yoann, Íñiguez de la Torre Mulas, Ignacio, Novoa López, José Antonio, García Pérez, Óscar Alberto, Sánchez Martín, Héctor, Millithaler, Jean Francois, Vaquero Monte, Daniel, Delgado Notario, Juan Antonio, Clericò, Vito, González Sánchez, Tomás, Mateos López, Javier
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2020
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/144051
Acceso en línea:http://hdl.handle.net/10366/144051
Access Level:acceso abierto
Palabra clave:Gunn oscillations
III-V semiconductors
InGaAs
Nanofabrication
RF measurements
Noise power density
2211.25 Semiconductores
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spelling Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodesLechaux, YoannÍñiguez de la Torre Mulas, IgnacioNovoa López, José AntonioGarcía Pérez, Óscar AlbertoSánchez Martín, HéctorMillithaler, Jean FrancoisVaquero Monte, DanielDelgado Notario, Juan AntonioClericò, VitoGonzález Sánchez, TomásMateos López, JavierGunn oscillationsIII-V semiconductorsInGaAsNanofabricationRF measurementsNoise power density2211.25 Semiconductores[EN]In this work, In0.53Ga0.47As planar Gunn diodes specifically designed for providing oscillations at frequencies below 30 GHz have been fabricated and characterized. Different types of measurements were used to define a set of consistent methods for the characterization of the oscillations that can be extended to the sub-THz frequency range. First, negative differential resistance and a current drop are found in the I–V curve, indicating the potential presence of Gunn oscillations (GOs), which is then confirmed by means of a vector network analyzer, used to measure both the S11 parameter and the noise power density. The onset of unstable GOs at applied voltages where the negative differential resistance is hardly visible in the I–V curve is evidenced by the observation of a noise bump at very low frequency for the same applied voltage range. Subsequently, the formation of stable oscillations with an almost constant frequency of 8.8 GHz is observed for voltages beyond the current drop. These results have been corroborated by measurements performed with a spectrum analyzer, which are fully consistent with the findings achieved by the other techniques, all of them applicable to Gunn diodes oscillating at much higher frequencies, even above 300 GHz.Spanish MINECO through project TEC2017-83910-R and the Junta de Castilla y León and FEDER through projects SA022U16 and SA254P18.202020202020info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10366/144051reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)InglésTEC2017-83910-RSA254P18info:eu-repo/semantics/openAccessoai:gredos.usal.es:10366/1440512026-06-07T06:28:51Z
dc.title.none.fl_str_mv Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
title Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
spellingShingle Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
Lechaux, Yoann
Gunn oscillations
III-V semiconductors
InGaAs
Nanofabrication
RF measurements
Noise power density
2211.25 Semiconductores
title_short Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
title_full Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
title_fullStr Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
title_full_unstemmed Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
title_sort Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes
dc.creator.none.fl_str_mv Lechaux, Yoann
Íñiguez de la Torre Mulas, Ignacio
Novoa López, José Antonio
García Pérez, Óscar Alberto
Sánchez Martín, Héctor
Millithaler, Jean Francois
Vaquero Monte, Daniel
Delgado Notario, Juan Antonio
Clericò, Vito
González Sánchez, Tomás
Mateos López, Javier
author Lechaux, Yoann
author_facet Lechaux, Yoann
Íñiguez de la Torre Mulas, Ignacio
Novoa López, José Antonio
García Pérez, Óscar Alberto
Sánchez Martín, Héctor
Millithaler, Jean Francois
Vaquero Monte, Daniel
Delgado Notario, Juan Antonio
Clericò, Vito
González Sánchez, Tomás
Mateos López, Javier
author_role author
author2 Íñiguez de la Torre Mulas, Ignacio
Novoa López, José Antonio
García Pérez, Óscar Alberto
Sánchez Martín, Héctor
Millithaler, Jean Francois
Vaquero Monte, Daniel
Delgado Notario, Juan Antonio
Clericò, Vito
González Sánchez, Tomás
Mateos López, Javier
author2_role author
author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Gunn oscillations
III-V semiconductors
InGaAs
Nanofabrication
RF measurements
Noise power density
2211.25 Semiconductores
topic Gunn oscillations
III-V semiconductors
InGaAs
Nanofabrication
RF measurements
Noise power density
2211.25 Semiconductores
description [EN]In this work, In0.53Ga0.47As planar Gunn diodes specifically designed for providing oscillations at frequencies below 30 GHz have been fabricated and characterized. Different types of measurements were used to define a set of consistent methods for the characterization of the oscillations that can be extended to the sub-THz frequency range. First, negative differential resistance and a current drop are found in the I–V curve, indicating the potential presence of Gunn oscillations (GOs), which is then confirmed by means of a vector network analyzer, used to measure both the S11 parameter and the noise power density. The onset of unstable GOs at applied voltages where the negative differential resistance is hardly visible in the I–V curve is evidenced by the observation of a noise bump at very low frequency for the same applied voltage range. Subsequently, the formation of stable oscillations with an almost constant frequency of 8.8 GHz is observed for voltages beyond the current drop. These results have been corroborated by measurements performed with a spectrum analyzer, which are fully consistent with the findings achieved by the other techniques, all of them applicable to Gunn diodes oscillating at much higher frequencies, even above 300 GHz.
publishDate 2020
dc.date.none.fl_str_mv 2020
2020
2020
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/144051
url http://hdl.handle.net/10366/144051
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv TEC2017-83910-R
SA254P18
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300724

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