Raman spectroscopy of few-layers TaS2 and Mo-DopedTaS 2 with enhanced superconductivity
The use of simple, fast, and economic experimental tools to charac-terize low-dimensional materials is an important step in the process ofdemocratizing their use. Raman spectroscopy has arisen as a way ofindirectly determining the thickness of nanolayers of transition metaldichalcogenides (TMDs), av...
| Autores: | , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2022 |
| País: | España |
| Institución: | Universidad Autónoma de Madrid |
| Repositorio: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.uam.es:10486/713978 |
| Acceso en línea: | http://hdl.handle.net/10486/713978 https://dx.doi.org/10.1002/aelm.202200457 |
| Access Level: | acceso abierto |
| Palabra clave: | Exfoliated crystals Nanolayers Raman spectroscopy Superconductivity Transition metal dichalcogenides (TMDs) TaS2 Física |
| Sumario: | The use of simple, fast, and economic experimental tools to charac-terize low-dimensional materials is an important step in the process ofdemocratizing their use. Raman spectroscopy has arisen as a way ofindirectly determining the thickness of nanolayers of transition metaldichalcogenides (TMDs), avoiding the use of more expensive tools suchas atomic force microscopy, and it is therefore a widely used techniquein the study of semiconducting TMDs. However, the study of manymetallic TMDs in the limit of few atomic layers is still behind whencompared to their semiconducting counterparts, partly due to the lack ofsimilar alternative characterization studies. In this work the characteri-zation of the Raman spectrum, specifically of the E 22gg11 - and A1g -modes,of mechanically exfoliated Ta 1−xMoxS 2 , a metallic TMD which exhibitscharge density wave (CDW) formation and superconductivity, is pre-sented. The clear identification of contributions coming from the SiO 2 /Si substrate allowed the isolation of the individual E 22gg11 - and A1g -modes ofthe samples and, for the first time, the observation of a clear evolutionof their Raman shifts as a function of sample thickness. This provides away of indirectly determining sample thickness in the limit of few atomiclayers in Ta 1−xMoxS |
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