Order quantification of hexagonal periodic arrays fabricated by in situ solvent-assisted nanoimprint lithography of block copolymers

Directed self-assembly of block copolymer polystyrene-b-polyethylene oxide (PS-b-PEO) thin film was achieved by a one-pot methodology of solvent vapor assisted nanoimprint lithography (SAIL). Simultaneous solvent-anneal and imprinting of a PS-b-PEO thin film on silicon without surface pre-treatments...

Descripción completa

Detalles Bibliográficos
Autores: Delgado Simao, Claudia|||0000-0003-3837-9311, Khunsin, Worawut, Kehagias, Nikolaos|||0000-0002-2698-383X, Salaun, Mathieu, Zelsmann, Marc, Morris, Michael A., Sotomayor Torres, Clivia M.|||0000-0001-9986-2716
Tipo de recurso: artículo
Fecha de publicación:2014
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:212923
Acceso en línea:https://ddd.uab.cat/record/212923
https://dx.doi.org/urn:doi:10.1088/0957-4484/25/17/175703
Access Level:acceso abierto
Descripción
Sumario:Directed self-assembly of block copolymer polystyrene-b-polyethylene oxide (PS-b-PEO) thin film was achieved by a one-pot methodology of solvent vapor assisted nanoimprint lithography (SAIL). Simultaneous solvent-anneal and imprinting of a PS-b-PEO thin film on silicon without surface pre-treatments yielded a 250 nm line grating decorated with 20 nm diameter nanodots array over a large surface area of up to 4' wafer scale. The grazing-incidence small-angle x-ray scattering diffraction pattern showed the fidelity of the NIL stamp pattern replication and confirmed the periodicity of the BCP of 40 nm. The order of the hexagonally arranged nanodot lattice was quantified by SEM image analysis using the opposite partner method and compared to conventionally solvent-annealed block copolymer films. The imprint-based SAIL methodology thus demonstrated an improvement in ordering of the nanodot lattice of up to 50%, and allows significant time and cost reduction in the processing of these structures.