Local distribution of deep centers in GaP studied by infrared cathodoluminescence
Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to P(Ga) antisite defects. This emission has been found to be higher at dislocations giving a CL image oppo...
| Autores: | , , |
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| Formato: | artículo |
| Fecha de publicación: | 1991 |
| País: | España |
| Recursos: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59289 |
| Acesso em linha: | https://hdl.handle.net/20.500.14352/59289 |
| Access Level: | acceso abierto |
| Palavra-chave: | 538.9 Vacancy Defects Física de materiales |
| Resumo: | Near-infrared cathodoluminescence (CL) in the scanning electron microscope has been used to characterize GaP:S. Spectra of as-grown crystals show a broadband at about 1240 nm, probably related to P(Ga) antisite defects. This emission has been found to be higher at dislocations giving a CL image opposite to the visible CL image. |
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