Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)

Stacked layers of self-assembled In(Ga)As quantum rings on GaAs grown by solid source molecular beam epitaxy are studied by ex situ atomic force microscopy (AFM), low temperature photoluminescence (PL) and cross-sectional transmission electron microscopy (XTEM). The influence of the strain field and...

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Detalles Bibliográficos
Autores: Granados, Daniel, García Martínez, Jorge Manuel, Ben, Teresa, Molina, Sergio I.
Tipo de recurso: artículo
Fecha de publicación:2005
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/19236
Acceso en línea:http://hdl.handle.net/10261/19236
Access Level:acceso abierto
Palabra clave:Gallium arsenide
Indium compounds
III-V semiconductors
Semiconductor quantum dots
Self-assembly
Photoluminescence
Surface morphology
Surface segregation
Internal stresses
Transmission electron microscopy
Atomic force microscopy
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spelling Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)Granados, DanielGarcía Martínez, Jorge ManuelBen, TeresaMolina, Sergio I.Gallium arsenideIndium compoundsIII-V semiconductorsSemiconductor quantum dotsSelf-assemblyPhotoluminescenceSurface morphologySurface segregationInternal stressesTransmission electron microscopyAtomic force microscopyStacked layers of self-assembled In(Ga)As quantum rings on GaAs grown by solid source molecular beam epitaxy are studied by ex situ atomic force microscopy (AFM), low temperature photoluminescence (PL) and cross-sectional transmission electron microscopy (XTEM). The influence of the strain field and InAs segregation on the surface morphology, optical properties and vertical ordering of three quantum ring layers is analyzed for GaAs spacers between layers from 1.5 to 14 nm. AFM and PL results show that samples with spacers >6 nm have surface morphology and optical properties similar to single layers samples. XTEM results on samples with 3 and 6 nm GaAs spacers show that the rings are preserved after capping with GaAs, and evidence the existence of vertically ordered quantum rings.This work was supported by Spanish MCyT under NANOSELF project sTIC2002-04096d, by NANOMAT project of the EC Growth Program sContract No. G5RD-CT-2001-00545d and by the SANDiE Network of excellence sContract No. NMP4-CT-2004-500101d. The authors also thank the Junta de Andalucía sPAI research group TEP- 0120d. TEM measurements were carried out in the DMESCCYT. The authors acknowledge P. Offermans and P. Koenraad for fruitful discussions.Peer reviewedAmerican Institute of Physics200920092005info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501148592 bytesapplication/pdfhttp://hdl.handle.net/10261/19236reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Ingléshttp://link.aip.org/link/?APPLAB/86/071918/1http://dx.doi.org/10.1063/1.1866228info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/192362026-05-22T06:33:51Z
dc.title.none.fl_str_mv Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)
title Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)
spellingShingle Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)
Granados, Daniel
Gallium arsenide
Indium compounds
III-V semiconductors
Semiconductor quantum dots
Self-assembly
Photoluminescence
Surface morphology
Surface segregation
Internal stresses
Transmission electron microscopy
Atomic force microscopy
title_short Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)
title_full Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)
title_fullStr Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)
title_full_unstemmed Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)
title_sort Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001)
dc.creator.none.fl_str_mv Granados, Daniel
García Martínez, Jorge Manuel
Ben, Teresa
Molina, Sergio I.
author Granados, Daniel
author_facet Granados, Daniel
García Martínez, Jorge Manuel
Ben, Teresa
Molina, Sergio I.
author_role author
author2 García Martínez, Jorge Manuel
Ben, Teresa
Molina, Sergio I.
author2_role author
author
author
dc.subject.none.fl_str_mv Gallium arsenide
Indium compounds
III-V semiconductors
Semiconductor quantum dots
Self-assembly
Photoluminescence
Surface morphology
Surface segregation
Internal stresses
Transmission electron microscopy
Atomic force microscopy
topic Gallium arsenide
Indium compounds
III-V semiconductors
Semiconductor quantum dots
Self-assembly
Photoluminescence
Surface morphology
Surface segregation
Internal stresses
Transmission electron microscopy
Atomic force microscopy
description Stacked layers of self-assembled In(Ga)As quantum rings on GaAs grown by solid source molecular beam epitaxy are studied by ex situ atomic force microscopy (AFM), low temperature photoluminescence (PL) and cross-sectional transmission electron microscopy (XTEM). The influence of the strain field and InAs segregation on the surface morphology, optical properties and vertical ordering of three quantum ring layers is analyzed for GaAs spacers between layers from 1.5 to 14 nm. AFM and PL results show that samples with spacers >6 nm have surface morphology and optical properties similar to single layers samples. XTEM results on samples with 3 and 6 nm GaAs spacers show that the rings are preserved after capping with GaAs, and evidence the existence of vertically ordered quantum rings.
publishDate 2005
dc.date.none.fl_str_mv 2005
2009
2009
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/19236
url http://hdl.handle.net/10261/19236
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv http://link.aip.org/link/?APPLAB/86/071918/1
http://dx.doi.org/10.1063/1.1866228
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 148592 bytes
application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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