Sn doped GeO_2 nanowires with waveguiding behavior

Sn doped GeO_2 nanowires and microwires have been grown by an evaporation-deposition method, using a mixture of Ge and SnO_2 powders as precursors. Comparison with undoped GeO_2 nanowires grown by the same method shows that the presence of Sn prevents the formation of sharp bends, which makes the wi...

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Detalhes bibliográficos
Autores: Hidalgo Alcalde, Pedro, Méndez Martín, María Bianchi, Piqueras De Noriega, Francisco Javier
Formato: artículo
Fecha de publicación:2008
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/50937
Acesso em linha:https://hdl.handle.net/20.500.14352/50937
Access Level:acceso abierto
Palavra-chave:538.9
Oxide Nanowires
ZnO
Nanostructures
Whiskers
Física de materiales
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spelling Sn doped GeO_2 nanowires with waveguiding behaviorHidalgo Alcalde, PedroMéndez Martín, María BianchiPiqueras De Noriega, Francisco Javier538.9Oxide NanowiresZnONanostructuresWhiskersFísica de materialesSn doped GeO_2 nanowires and microwires have been grown by an evaporation-deposition method, using a mixture of Ge and SnO_2 powders as precursors. Comparison with undoped GeO_2 nanowires grown by the same method shows that the presence of Sn prevents the formation of sharp bends, which makes the wires more suitable for waveguiding applications. Incorporation of about 0.5 at.% of Sn into the wires influences their morphology and gives rise to wires showing two different cross-sectional dimensions along the growth axis. Sn does not influence the luminescence spectra in the visible range but causes the appearance of emission bands in the near-infrared range. The waveguiding behavior of the Sn doped wires for green and red laser light has been demonstrated.Iop Publishing LtdUniversidad Complutense de Madrid20082008-11-1220082008-11-12journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/50937reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/509372026-06-02T12:44:21Z
dc.title.none.fl_str_mv Sn doped GeO_2 nanowires with waveguiding behavior
title Sn doped GeO_2 nanowires with waveguiding behavior
spellingShingle Sn doped GeO_2 nanowires with waveguiding behavior
Hidalgo Alcalde, Pedro
538.9
Oxide Nanowires
ZnO
Nanostructures
Whiskers
Física de materiales
title_short Sn doped GeO_2 nanowires with waveguiding behavior
title_full Sn doped GeO_2 nanowires with waveguiding behavior
title_fullStr Sn doped GeO_2 nanowires with waveguiding behavior
title_full_unstemmed Sn doped GeO_2 nanowires with waveguiding behavior
title_sort Sn doped GeO_2 nanowires with waveguiding behavior
dc.creator.none.fl_str_mv Hidalgo Alcalde, Pedro
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
author Hidalgo Alcalde, Pedro
author_facet Hidalgo Alcalde, Pedro
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
author_role author
author2 Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
author2_role author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Oxide Nanowires
ZnO
Nanostructures
Whiskers
Física de materiales
topic 538.9
Oxide Nanowires
ZnO
Nanostructures
Whiskers
Física de materiales
description Sn doped GeO_2 nanowires and microwires have been grown by an evaporation-deposition method, using a mixture of Ge and SnO_2 powders as precursors. Comparison with undoped GeO_2 nanowires grown by the same method shows that the presence of Sn prevents the formation of sharp bends, which makes the wires more suitable for waveguiding applications. Incorporation of about 0.5 at.% of Sn into the wires influences their morphology and gives rise to wires showing two different cross-sectional dimensions along the growth axis. Sn does not influence the luminescence spectra in the visible range but causes the appearance of emission bands in the near-infrared range. The waveguiding behavior of the Sn doped wires for green and red laser light has been demonstrated.
publishDate 2008
dc.date.none.fl_str_mv 2008
2008-11-12
2008
2008-11-12
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/50937
url https://hdl.handle.net/20.500.14352/50937
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Iop Publishing Ltd
publisher.none.fl_str_mv Iop Publishing Ltd
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,301603

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