High aspect ratio GeO_2 nano- and microwires with waveguiding behaviour
High aspect ratio GeO_2 nano- and microwires have been grown by thermal treatment at 600 degrees C of compacted Ge powder under argon flow. The wires have cross-sectional dimensions from less than 100 nm to about 1 mu m, depending on the duration of the treatment, and lengths of up to about 2000 mu...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2007 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/50943 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/50943 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Oxide Nanowires Growth ZnO Luminescence Networks Nanorods Wires Física de materiales |
| Sumario: | High aspect ratio GeO_2 nano- and microwires have been grown by thermal treatment at 600 degrees C of compacted Ge powder under argon flow. The wires have cross-sectional dimensions from less than 100 nm to about 1 mu m, depending on the duration of the treatment, and lengths of up to about 2000 mu m. Waveguide behaviour of the wires was demonstrated for visible light, which shows the potential applications of these structures for optical nanodevices. |
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