Third-Harmonic and intermodulation distortion in bulk acoustic-wave resonators

This article discusses on the measured third-order intermodulation (IMD3) products and third harmonics (H3) appearing in a set of six different solidly mounted resonators (SMR) and bulk acoustic-wave (BAW) resonators with different shapes and stack configurations. The discussion is supported by a co...

ver descrição completa

Detalhes bibliográficos
Autores: García Pastor, David|||0000-0002-6491-0746, Collado Gómez, Juan Carlos|||0000-0002-8869-2739, Mateu Mateu, Jordi|||0000-0001-9833-9966, Aigner, Robert
Tipo de documento: artigo
Data de publicação:2019
País:España
Recursos:Universitat Politècnica de Catalunya (UPC)
Repositório:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglês
OAI Identifier:oai:upcommons.upc.edu:2117/180458
Acesso em linha:https://hdl.handle.net/2117/180458
https://dx.doi.org/10.1109/TMTT.2019.2955135
Access Level:Acceso aberto
Palavra-chave:Electric filters
Microwave circuits
Aluminum nitride (AlN)
Bulk acoustic wave (BAW)
Electroacoustic
Nonlinear
Nonlinearities
Silicon dioxide SiO2
Solidly mounted resonators (SMRs)
Third-harmonic (H3)
third-order intermodulation (IMD3)
third-order intermodulation (IMD3) product
Circuits de microones
Filtres elèctrics
Àrees temàtiques de la UPC::Enginyeria de la telecomunicació
Descrição
Resumo:This article discusses on the measured third-order intermodulation (IMD3) products and third harmonics (H3) appearing in a set of six different solidly mounted resonators (SMR) and bulk acoustic-wave (BAW) resonators with different shapes and stack configurations. The discussion is supported by a comprehensive nonlinear distributed circuit model that considers the nonlinear effects potentially occurring in any layer of the resonator stack. The aluminum-nitride (AlN) and silicon-dioxide (SiO2) layers are identified as the most significant contributors to the IMD3 and H3. The frequency profile of the third-order spurious signals also reveals that, in temperature-compensated resonators, where the SiO2 layers are usually thicker, the remixing effects from the second-order nonlinear terms are the major contributors to the IMD3 and H3. These second-order terms are those that explain the second-harmonic (H2) generation, whose measurements are also reported in this article. Unique values of the nonlinear material constants can explain all the measurements despite the resonators have different shapes, resonance frequencies, and stack configurations.