Raman and cathodoluminescence analysis of transition metal ion implanted Ga₂O₃ nanowires
The structural and luminescence properties of gallium oxide nanowires doped with chromium or manganese have been investigated. Undoped Ga₂O₃ nanostructures have been fabricated by a thermal evaporation method, while doping was subsequently achieved by ion implantation followed by thermal annealing....
| Autores: | , , , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2017 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/18211 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/18211 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Gallium oxide Semiconductor nanowires Optical-transitions Beta-Ga₂O₃ Luminescence Crystals Field Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
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Raman and cathodoluminescence analysis of transition metal ion implanted Ga₂O₃ nanowiresGonzalo, A.Nogales Díaz, EmilioLorenz, K.Víllora, E. G.Shimamura, K:Piqueras De Noriega, Francisco JavierMéndez Martín, María Bianchi538.9Gallium oxideSemiconductor nanowiresOptical-transitionsBeta-Ga₂O₃LuminescenceCrystalsFieldFísica de materialesFísica del estado sólido2211 Física del Estado SólidoThe structural and luminescence properties of gallium oxide nanowires doped with chromium or manganese have been investigated. Undoped Ga₂O₃ nanostructures have been fabricated by a thermal evaporation method, while doping was subsequently achieved by ion implantation followed by thermal annealing. Scanning electron microscopy (SEM) analysis has shown that this doping process does not alter the morphology of the nanostructures. Ion implantation results in partial amorphization of the crystal lattice, as deduced from Raman spectroscopy studies. Thermal annealing at different temperatures was carried out in order to restore the crystallinity of the nanowires. Raman spectroscopy analysis demonstrates that recrystallization starts at about 700 °C and a complete recrystallization is achieved at. abOut 1000 °C. Cathodoluminescence (CL) analysis has been used to study the emissions in the 300-900 nm range. As-implanted nanowires virtually do not emit any light, which is related to their Poor crystal quality and the implantation induced defects. Thermal annealing results in effective CL emission. In particular, a clear correlation between crystallinity of the nanowires doped with Cr and the emission from the ²E-⁴A₂ and ⁴T₂-⁴A₂ intraionic transitions has been observed. On the other hand, emissions directly related to intraionic transitions of Mn have not been found in the nanowires implanted with this ion. The influence of the implantation process and annealing temperature on the observed changes in the donor -acceptor pairs (DAP) band of Ga₂O₃ is discussed.Elsevier Science BVUniversidad Complutense de Madrid20172017-11-0120172017-11-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/18211reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Atribución-NoComercial-SinDerivadas 3.0 Españahttps://creativecommons.org/licenses/by-nc-nd/3.0/es/info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/182112026-06-02T12:44:21Z |
| dc.title.none.fl_str_mv |
Raman and cathodoluminescence analysis of transition metal ion implanted Ga₂O₃ nanowires |
| title |
Raman and cathodoluminescence analysis of transition metal ion implanted Ga₂O₃ nanowires |
| spellingShingle |
Raman and cathodoluminescence analysis of transition metal ion implanted Ga₂O₃ nanowires Gonzalo, A. 538.9 Gallium oxide Semiconductor nanowires Optical-transitions Beta-Ga₂O₃ Luminescence Crystals Field Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| title_short |
Raman and cathodoluminescence analysis of transition metal ion implanted Ga₂O₃ nanowires |
| title_full |
Raman and cathodoluminescence analysis of transition metal ion implanted Ga₂O₃ nanowires |
| title_fullStr |
Raman and cathodoluminescence analysis of transition metal ion implanted Ga₂O₃ nanowires |
| title_full_unstemmed |
Raman and cathodoluminescence analysis of transition metal ion implanted Ga₂O₃ nanowires |
| title_sort |
Raman and cathodoluminescence analysis of transition metal ion implanted Ga₂O₃ nanowires |
| dc.creator.none.fl_str_mv |
Gonzalo, A. Nogales Díaz, Emilio Lorenz, K. Víllora, E. G. Shimamura, K: Piqueras De Noriega, Francisco Javier Méndez Martín, María Bianchi |
| author |
Gonzalo, A. |
| author_facet |
Gonzalo, A. Nogales Díaz, Emilio Lorenz, K. Víllora, E. G. Shimamura, K: Piqueras De Noriega, Francisco Javier Méndez Martín, María Bianchi |
| author_role |
author |
| author2 |
Nogales Díaz, Emilio Lorenz, K. Víllora, E. G. Shimamura, K: Piqueras De Noriega, Francisco Javier Méndez Martín, María Bianchi |
| author2_role |
author author author author author author |
| dc.contributor.none.fl_str_mv |
Universidad Complutense de Madrid |
| dc.subject.none.fl_str_mv |
538.9 Gallium oxide Semiconductor nanowires Optical-transitions Beta-Ga₂O₃ Luminescence Crystals Field Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| topic |
538.9 Gallium oxide Semiconductor nanowires Optical-transitions Beta-Ga₂O₃ Luminescence Crystals Field Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| description |
The structural and luminescence properties of gallium oxide nanowires doped with chromium or manganese have been investigated. Undoped Ga₂O₃ nanostructures have been fabricated by a thermal evaporation method, while doping was subsequently achieved by ion implantation followed by thermal annealing. Scanning electron microscopy (SEM) analysis has shown that this doping process does not alter the morphology of the nanostructures. Ion implantation results in partial amorphization of the crystal lattice, as deduced from Raman spectroscopy studies. Thermal annealing at different temperatures was carried out in order to restore the crystallinity of the nanowires. Raman spectroscopy analysis demonstrates that recrystallization starts at about 700 °C and a complete recrystallization is achieved at. abOut 1000 °C. Cathodoluminescence (CL) analysis has been used to study the emissions in the 300-900 nm range. As-implanted nanowires virtually do not emit any light, which is related to their Poor crystal quality and the implantation induced defects. Thermal annealing results in effective CL emission. In particular, a clear correlation between crystallinity of the nanowires doped with Cr and the emission from the ²E-⁴A₂ and ⁴T₂-⁴A₂ intraionic transitions has been observed. On the other hand, emissions directly related to intraionic transitions of Mn have not been found in the nanowires implanted with this ion. The influence of the implantation process and annealing temperature on the observed changes in the donor -acceptor pairs (DAP) band of Ga₂O₃ is discussed. |
| publishDate |
2017 |
| dc.date.none.fl_str_mv |
2017 2017-11-01 2017 2017-11-01 |
| dc.type.none.fl_str_mv |
journal article http://purl.org/coar/resource_type/c_6501 |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/20.500.14352/18211 |
| url |
https://hdl.handle.net/20.500.14352/18211 |
| dc.language.none.fl_str_mv |
Inglés eng |
| language_invalid_str_mv |
Inglés |
| language |
eng |
| dc.rights.none.fl_str_mv |
open access http://purl.org/coar/access_right/c_abf2 Atribución-NoComercial-SinDerivadas 3.0 España https://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
| dc.rights.openaire.fl_str_mv |
info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
open access http://purl.org/coar/access_right/c_abf2 Atribución-NoComercial-SinDerivadas 3.0 España https://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
application/pdf |
| dc.publisher.none.fl_str_mv |
Elsevier Science BV |
| publisher.none.fl_str_mv |
Elsevier Science BV |
| dc.source.none.fl_str_mv |
reponame:Docta Complutense instname:Universidad Complutense de Madrid (UCM) |
| instname_str |
Universidad Complutense de Madrid (UCM) |
| reponame_str |
Docta Complutense |
| collection |
Docta Complutense |
| repository.name.fl_str_mv |
|
| repository.mail.fl_str_mv |
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1869406913287946240 |
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15,298079 |