Hall effect in Gd5(Si1.8Ge2.2)
We have measured the Hall effect of polycrystalline Gd5(Si1.8Ge2.2) in the temperature range 4–360 K and in magnetic fields of up to 12 T. The Hall resistivity follows the magnetization of the material in the range studied. The anomalous Hall coefficient increases with increasing temperature and sho...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2000 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/256522 |
| Acceso en línea: | http://hdl.handle.net/10261/256522 |
| Access Level: | acceso abierto |
| Sumario: | We have measured the Hall effect of polycrystalline Gd5(Si1.8Ge2.2) in the temperature range 4–360 K and in magnetic fields of up to 12 T. The Hall resistivity follows the magnetization of the material in the range studied. The anomalous Hall coefficient increases with increasing temperature and shows a sharp dip at the magnetostructural transition. Away from the dip, the Hall coefficient scales roughly with the square of the total resistivity, as expected if side-jump scattering dominates. |
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