Giant magnetoresistance near the magnetostructural transition in Gd5(Si1.8Ge2.2)
Zero-field electrical resistivity over the temperature range of 4–300 K and magnetoresistance in magnetic fields of up to 12 T have been measured in Gd5(Si1.8Ge2.2). This system undergoes a first-order magnetostructural transition at ≅240 K, from a high-temperature paramagnetic to a low-temperature...
| Authors: | , , , , |
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| Format: | article |
| Status: | Published version |
| Publication Date: | 1998 |
| Country: | España |
| Institution: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repository: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/256502 |
| Online Access: | http://hdl.handle.net/10261/256502 |
| Access Level: | Open access |
| Summary: | Zero-field electrical resistivity over the temperature range of 4–300 K and magnetoresistance in magnetic fields of up to 12 T have been measured in Gd5(Si1.8Ge2.2). This system undergoes a first-order magnetostructural transition at ≅240 K, from a high-temperature paramagnetic to a low-temperature ferromagnetic phase, accompanied by a large drop in the resistivity. The application of an external magnetic field above can induce this transition, and a giant negative magnetoresistance effect (Δρ/ρ≅−20%) is observed associated with this first-order field-induced transition. |
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