Integration of a Very High Quality Factor Filter in Empty Substrate Integrated Waveguide at Q-band

Recently, new methodologies for manufacturing empty waveguides completely integrated in a planar substrate have been proposed in order to improve the performance of substrate-integrated devices. One of these alternatives is the so-called Empty Substrate-Integrated Waveguide (ESIW). The height of hig...

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Autores: Martínez Zamora, Juan Ángel, Dios de Dios, Juan José de, Belenguer, Ángel, Esteban, Héctor, Boria, Vicente E.
Tipo de recurso: artículo
Fecha de publicación:2018
País:España
Institución:Universidad de Castilla-La Mancha
Repositorio:RUIdeRA. Repositorio Institucional de la UCLM
OAI Identifier:oai:ruidera.uclm.es:10578/19714
Acceso en línea:http://hdl.handle.net/10578/19714
Access Level:acceso abierto
Palabra clave:Quality factor
Substrate Integrated Waveguide (ESIW)
Substrate Integrated Waveguide (SIW)
Rect- angular waveguide
Microstrip transition
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spelling Integration of a Very High Quality Factor Filter in Empty Substrate Integrated Waveguide at Q-bandMartínez Zamora, Juan ÁngelDios de Dios, Juan José deBelenguer, ÁngelEsteban, HéctorBoria, Vicente E.Quality factorSubstrate Integrated Waveguide (ESIW)Substrate Integrated Waveguide (SIW)Rect- angular waveguideMicrostrip transitionRecently, new methodologies for manufacturing empty waveguides completely integrated in a planar substrate have been proposed in order to improve the performance of substrate-integrated devices. One of these alternatives is the so-called Empty Substrate-Integrated Waveguide (ESIW). The height of high-frequency substrates, where ESIW devices are integrated, is very small. Then, the capacity of storing energy of ESIW resonators is drastically reduced, and, as a result, their quality factor is not as high as it could be with a higher ESIW. In order to overcome this restriction, a novel integrated structure is proposed to embed very high-quality factor filters based on ESIW with increased height. As a result we show in this work, for the first time, the successful integration of an increased-height ESIW filter in a printed circuit board (PCB) of 0.305 mm height at Q-band, achieving a quality factor above 1000, which is a remarkable result for a completely substrate-integrated device operating in this frequency band. When compared with the same filter manufactured with an ESIW with the same height as the substrate, the novel filter shows a measured Q-factor 85% higher.EEUU: Institute of Electrical and Electronics Engineers (IEEE)201920192018info:eu-repo/semantics/articleapplication/pdfapplication/pdfhttp://hdl.handle.net/10578/19714reponame:RUIdeRA. Repositorio Institucional de la UCLMinstname:Universidad de Castilla-La ManchaInglésTEC2016-75934-C4-3-Rinfo:eu-repo/semantics/openAccessoai:ruidera.uclm.es:10578/197142026-05-27T07:36:41Z
dc.title.none.fl_str_mv Integration of a Very High Quality Factor Filter in Empty Substrate Integrated Waveguide at Q-band
title Integration of a Very High Quality Factor Filter in Empty Substrate Integrated Waveguide at Q-band
spellingShingle Integration of a Very High Quality Factor Filter in Empty Substrate Integrated Waveguide at Q-band
Martínez Zamora, Juan Ángel
Quality factor
Substrate Integrated Waveguide (ESIW)
Substrate Integrated Waveguide (SIW)
Rect- angular waveguide
Microstrip transition
title_short Integration of a Very High Quality Factor Filter in Empty Substrate Integrated Waveguide at Q-band
title_full Integration of a Very High Quality Factor Filter in Empty Substrate Integrated Waveguide at Q-band
title_fullStr Integration of a Very High Quality Factor Filter in Empty Substrate Integrated Waveguide at Q-band
title_full_unstemmed Integration of a Very High Quality Factor Filter in Empty Substrate Integrated Waveguide at Q-band
title_sort Integration of a Very High Quality Factor Filter in Empty Substrate Integrated Waveguide at Q-band
dc.creator.none.fl_str_mv Martínez Zamora, Juan Ángel
Dios de Dios, Juan José de
Belenguer, Ángel
Esteban, Héctor
Boria, Vicente E.
author Martínez Zamora, Juan Ángel
author_facet Martínez Zamora, Juan Ángel
Dios de Dios, Juan José de
Belenguer, Ángel
Esteban, Héctor
Boria, Vicente E.
author_role author
author2 Dios de Dios, Juan José de
Belenguer, Ángel
Esteban, Héctor
Boria, Vicente E.
author2_role author
author
author
author
dc.subject.none.fl_str_mv Quality factor
Substrate Integrated Waveguide (ESIW)
Substrate Integrated Waveguide (SIW)
Rect- angular waveguide
Microstrip transition
topic Quality factor
Substrate Integrated Waveguide (ESIW)
Substrate Integrated Waveguide (SIW)
Rect- angular waveguide
Microstrip transition
description Recently, new methodologies for manufacturing empty waveguides completely integrated in a planar substrate have been proposed in order to improve the performance of substrate-integrated devices. One of these alternatives is the so-called Empty Substrate-Integrated Waveguide (ESIW). The height of high-frequency substrates, where ESIW devices are integrated, is very small. Then, the capacity of storing energy of ESIW resonators is drastically reduced, and, as a result, their quality factor is not as high as it could be with a higher ESIW. In order to overcome this restriction, a novel integrated structure is proposed to embed very high-quality factor filters based on ESIW with increased height. As a result we show in this work, for the first time, the successful integration of an increased-height ESIW filter in a printed circuit board (PCB) of 0.305 mm height at Q-band, achieving a quality factor above 1000, which is a remarkable result for a completely substrate-integrated device operating in this frequency band. When compared with the same filter manufactured with an ESIW with the same height as the substrate, the novel filter shows a measured Q-factor 85% higher.
publishDate 2018
dc.date.none.fl_str_mv 2018
2019
2019
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10578/19714
url http://hdl.handle.net/10578/19714
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv TEC2016-75934-C4-3-R
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv EEUU: Institute of Electrical and Electronics Engineers (IEEE)
publisher.none.fl_str_mv EEUU: Institute of Electrical and Electronics Engineers (IEEE)
dc.source.none.fl_str_mv reponame:RUIdeRA. Repositorio Institucional de la UCLM
instname:Universidad de Castilla-La Mancha
instname_str Universidad de Castilla-La Mancha
reponame_str RUIdeRA. Repositorio Institucional de la UCLM
collection RUIdeRA. Repositorio Institucional de la UCLM
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300719

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