Implementation of a DDR3 PHY in a 22nm technology

One of the bottlenecks in the performance of academic RISC-V ASIC processors is high-speed memory access. The use of high-speed DDR RAM chips on the board requires the integration in the ASIC of a very complex physical interface block (PHY) that encompasses analog and digital parts. This PHY block i...

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Detalles Bibliográficos
Autor: El Mehtar García, Sarah
Tipo de recurso: tesis de maestría
Fecha de publicación:2024
País:España
Institución:Universitat Politècnica de Catalunya (UPC)
Repositorio:UPCommons. Portal del coneixement obert de la UPC
Idioma:inglés
OAI Identifier:oai:upcommons.upc.edu:2117/422303
Acceso en línea:https://hdl.handle.net/2117/422303
Access Level:acceso abierto
Palabra clave:Application specific integrated circuits--Design and construction
RISC microprocessors
DDR3
PHY
phyisical implementation
ASIC
Circuits integrats d'aplicació específica--Disseny i construcció
Microprocessadors RISC
Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
Descripción
Sumario:One of the bottlenecks in the performance of academic RISC-V ASIC processors is high-speed memory access. The use of high-speed DDR RAM chips on the board requires the integration in the ASIC of a very complex physical interface block (PHY) that encompasses analog and digital parts. This PHY block is thus technology-specific and very expensive to acquire. This master's thesis will start from a DDR3 PHY design verified on FPGA with the goal to obtain a physical implementation in ASIC 22nm technology. This implies the design of selected blocks in full custom as well as the synthesis and place and route phases of the top-level design to obtain a realistic layout.