Dual-Inductive and Programmable Switching: A New Paradigm in Ionic Interface-Controlled Perovskite Memory

[EN] While halide perovskite (HP) memristors exhibit significant potential for artificial neural networks, their reliance on stochastic filamentary switching severely compromises operational stability. Here, we demonstrate a fully programmable, forming-free HP memristor that overcomes this intrinsic...

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Detalles Bibliográficos
Autores: Kim, Soyeon, Bisquert, Juan|||0000-0003-4987-4887
Tipo de recurso: artículo
Fecha de publicación:2026
País:España
Institución:Universitat Politècnica de València (UPV)
Repositorio:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
Idioma:inglés
OAI Identifier:oai:dnet:riunet______::a1af346eb73ee2273d9e9f0e0c870cbe
Acceso en línea:https://riunet.upv.es/handle/10251/235934
Access Level:acceso abierto
Palabra clave:Dual inductive switching
Halide perovskites
Interface engineering
Ion migration
Perovskite memory
Resistive switching
id ES_3d0c82b0ef5bdc99debf67c87fc6142e
oai_identifier_str oai:dnet:riunet______::a1af346eb73ee2273d9e9f0e0c870cbe
network_acronym_str ES
network_name_str España
repository_id_str
spelling Dual-Inductive and Programmable Switching: A New Paradigm in Ionic Interface-Controlled Perovskite MemoryKim, SoyeonBisquert, Juan|||0000-0003-4987-4887Dual inductive switchingHalide perovskitesInterface engineeringIon migrationPerovskite memoryResistive switching[EN] While halide perovskite (HP) memristors exhibit significant potential for artificial neural networks, their reliance on stochastic filamentary switching severely compromises operational stability. Here, we demonstrate a fully programmable, forming-free HP memristor that overcomes this intrinsic stochasticity through precise ionic interface engineering. By employing 1,4-butanediammonium iodide (BDAI2) as an ion-modulating layer, we construct a structurally rigid, cross-linked interfacial network strongly anchored to the 3D HP surface, forming the grain boundaries-modulated barrier switching. The robust ion-blocking barrier fundamentally suppresses random filamentary growth. Resistive switching (RS) is instead governed by dynamic interfacial barrier modulation, driven by the asymmetric accumulation of mobile ions that electrostatically modulates charge injection. Crucially, this stable non-filamentary mechanism enables highly reproducible, bidirectional dual-inductive responses, and distinct non-zero crossing behaviors. For the first time in an operational HP memristor, we successfully achieved these combined dynamic features. We precisely control programmable multi-level states governed by compliance current and operation velocity. This defect-engineered, interface-driven approach establishes a highly reliable and dynamically controllable paradigm for advanced neuromorphic computing and analog memory architectures.This work was funded by the European Research Council (ERC) via Horizon Europe Advanced Grant, grant agreement no 101097688 ("PeroSpiker"). Additional institutional support by the Spanish Ministry of Science and Innovation (CEX2021-001230-S grant funded by MCIN/AEI/10.13039/501100011033) is gratefully acknowledged.John Wiley & SonsInstituto Universitario Mixto de Tecnología QuímicaEuropean CommissionMinisterio de Ciencia, Innovación y UniversidadesRepositorio Institucional de la Universitat Politècnica de València Riunet20262026-05-01journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://riunet.upv.es/handle/10251/235934reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valénciainstname:Universitat Politècnica de València (UPV)InglésengEuropean Commission https://doi.org/10.13039/501100000780 HE 101097688 Perovskite Spiking Neurons for Intelligent NetworksMinisterio de Ciencia, Innovación y Universidades https://doi.org/10.13039/100014440 CEX2021-001230-Sopen accesshttp://purl.org/coar/access_right/c_abf2Reconocimiento (by)http://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:dnet:riunet______::a1af346eb73ee2273d9e9f0e0c870cbe2026-06-13T07:49:27Z
dc.title.none.fl_str_mv Dual-Inductive and Programmable Switching: A New Paradigm in Ionic Interface-Controlled Perovskite Memory
title Dual-Inductive and Programmable Switching: A New Paradigm in Ionic Interface-Controlled Perovskite Memory
spellingShingle Dual-Inductive and Programmable Switching: A New Paradigm in Ionic Interface-Controlled Perovskite Memory
Kim, Soyeon
Dual inductive switching
Halide perovskites
Interface engineering
Ion migration
Perovskite memory
Resistive switching
title_short Dual-Inductive and Programmable Switching: A New Paradigm in Ionic Interface-Controlled Perovskite Memory
title_full Dual-Inductive and Programmable Switching: A New Paradigm in Ionic Interface-Controlled Perovskite Memory
title_fullStr Dual-Inductive and Programmable Switching: A New Paradigm in Ionic Interface-Controlled Perovskite Memory
title_full_unstemmed Dual-Inductive and Programmable Switching: A New Paradigm in Ionic Interface-Controlled Perovskite Memory
title_sort Dual-Inductive and Programmable Switching: A New Paradigm in Ionic Interface-Controlled Perovskite Memory
dc.creator.none.fl_str_mv Kim, Soyeon
Bisquert, Juan|||0000-0003-4987-4887
author Kim, Soyeon
author_facet Kim, Soyeon
Bisquert, Juan|||0000-0003-4987-4887
author_role author
author2 Bisquert, Juan|||0000-0003-4987-4887
author2_role author
dc.contributor.none.fl_str_mv Instituto Universitario Mixto de Tecnología Química
European Commission
Ministerio de Ciencia, Innovación y Universidades
Repositorio Institucional de la Universitat Politècnica de València Riunet
dc.subject.none.fl_str_mv Dual inductive switching
Halide perovskites
Interface engineering
Ion migration
Perovskite memory
Resistive switching
topic Dual inductive switching
Halide perovskites
Interface engineering
Ion migration
Perovskite memory
Resistive switching
description [EN] While halide perovskite (HP) memristors exhibit significant potential for artificial neural networks, their reliance on stochastic filamentary switching severely compromises operational stability. Here, we demonstrate a fully programmable, forming-free HP memristor that overcomes this intrinsic stochasticity through precise ionic interface engineering. By employing 1,4-butanediammonium iodide (BDAI2) as an ion-modulating layer, we construct a structurally rigid, cross-linked interfacial network strongly anchored to the 3D HP surface, forming the grain boundaries-modulated barrier switching. The robust ion-blocking barrier fundamentally suppresses random filamentary growth. Resistive switching (RS) is instead governed by dynamic interfacial barrier modulation, driven by the asymmetric accumulation of mobile ions that electrostatically modulates charge injection. Crucially, this stable non-filamentary mechanism enables highly reproducible, bidirectional dual-inductive responses, and distinct non-zero crossing behaviors. For the first time in an operational HP memristor, we successfully achieved these combined dynamic features. We precisely control programmable multi-level states governed by compliance current and operation velocity. This defect-engineered, interface-driven approach establishes a highly reliable and dynamically controllable paradigm for advanced neuromorphic computing and analog memory architectures.
publishDate 2026
dc.date.none.fl_str_mv 2026
2026-05-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://riunet.upv.es/handle/10251/235934
url https://riunet.upv.es/handle/10251/235934
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv European Commission https://doi.org/10.13039/501100000780 HE 101097688 Perovskite Spiking Neurons for Intelligent Networks
Ministerio de Ciencia, Innovación y Universidades https://doi.org/10.13039/100014440 CEX2021-001230-S
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reconocimiento (by)
http://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Reconocimiento (by)
http://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv John Wiley & Sons
publisher.none.fl_str_mv John Wiley & Sons
dc.source.none.fl_str_mv reponame:RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
instname:Universitat Politècnica de València (UPV)
instname_str Universitat Politècnica de València (UPV)
reponame_str RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
collection RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869406415001485312
score 15.812429

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