Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications

Due to their low leakage current, low noise levels, high thermal conductivity, and potential radiation hardness, SiC devices offer various advantages over Si devices in certain applications. As a result, they are being considered for operation in harsh environments, such as plasma diagnostic systems...

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Autores: Otero Ugobono, Sofía, Rafí Tatjer, Joan Marc, Godignon, Philippe, Pellegrini, Giulio, Rius Suñé, Gemma, Jiménez Ramos, María del Carmen, García López, Francisco Javier, García Osuna, Adrián
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2022
País:España
Institución:Universidad de Sevilla (US)
Repositorio:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:idus.us.es:11441/144565
Acceso en línea:https://hdl.handle.net/11441/144565
https://doi.org/10.4028/p-hd601i
Access Level:acceso abierto
Palabra clave:Epitaxial graphene
Detectors
Radiation hardness
Resistivity
CTLM
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spelling Monolithic integration of graphene in SiC radiation sensors for harsh-environment applicationsOtero Ugobono, SofíaRafí Tatjer, Joan MarcGodignon, PhilippePellegrini, GiulioRius Suñé, GemmaJiménez Ramos, María del CarmenGarcía López, Francisco JavierGarcía Osuna, AdriánEpitaxial grapheneDetectorsRadiation hardnessResistivityCTLMDue to their low leakage current, low noise levels, high thermal conductivity, and potential radiation hardness, SiC devices offer various advantages over Si devices in certain applications. As a result, they are being considered for operation in harsh environments, such as plasma diagnostic systems in future nuclear fusion reactors or in high energy physics applications. We report on relevant results of the GRACE project, which seeks to deliver a new generation of SiC sensors with graphene-enhanced contacts. Such devices are aimed to be radiation-hard and functional at high temperatures. The work presented in this paper focuses on the optimisation of the electrical contacts, along with the electrical characterisation and radiation-tolerance assessment of the first sensor prototypes produced.Trans Tech PublicationsFísica Aplicada IIFísica Atómica, Molecular y NuclearRNM138: Física Nuclear AplicadaAgencia Estatal de Investigación. EspañaEuropean Commission (EC). Fondo Europeo de Desarrollo Regional (FEDER)2022info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfapplication/pdfhttps://hdl.handle.net/11441/144565https://doi.org/10.4028/p-hd601ireponame:idUS. Depósito de Investigación de la Universidad de Sevillainstname:Universidad de Sevilla (US)InglésMaterials Science Forum, 1062, 458-462.RTC-2017-6369-3https://www.scientific.net/MSF.1062.458.pdfinfo:eu-repo/semantics/openAccessoai:idus.us.es:11441/1445652026-06-17T12:51:07Z
dc.title.none.fl_str_mv Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications
title Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications
spellingShingle Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications
Otero Ugobono, Sofía
Epitaxial graphene
Detectors
Radiation hardness
Resistivity
CTLM
title_short Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications
title_full Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications
title_fullStr Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications
title_full_unstemmed Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications
title_sort Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications
dc.creator.none.fl_str_mv Otero Ugobono, Sofía
Rafí Tatjer, Joan Marc
Godignon, Philippe
Pellegrini, Giulio
Rius Suñé, Gemma
Jiménez Ramos, María del Carmen
García López, Francisco Javier
García Osuna, Adrián
author Otero Ugobono, Sofía
author_facet Otero Ugobono, Sofía
Rafí Tatjer, Joan Marc
Godignon, Philippe
Pellegrini, Giulio
Rius Suñé, Gemma
Jiménez Ramos, María del Carmen
García López, Francisco Javier
García Osuna, Adrián
author_role author
author2 Rafí Tatjer, Joan Marc
Godignon, Philippe
Pellegrini, Giulio
Rius Suñé, Gemma
Jiménez Ramos, María del Carmen
García López, Francisco Javier
García Osuna, Adrián
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Física Aplicada II
Física Atómica, Molecular y Nuclear
RNM138: Física Nuclear Aplicada
Agencia Estatal de Investigación. España
European Commission (EC). Fondo Europeo de Desarrollo Regional (FEDER)
dc.subject.none.fl_str_mv Epitaxial graphene
Detectors
Radiation hardness
Resistivity
CTLM
topic Epitaxial graphene
Detectors
Radiation hardness
Resistivity
CTLM
description Due to their low leakage current, low noise levels, high thermal conductivity, and potential radiation hardness, SiC devices offer various advantages over Si devices in certain applications. As a result, they are being considered for operation in harsh environments, such as plasma diagnostic systems in future nuclear fusion reactors or in high energy physics applications. We report on relevant results of the GRACE project, which seeks to deliver a new generation of SiC sensors with graphene-enhanced contacts. Such devices are aimed to be radiation-hard and functional at high temperatures. The work presented in this paper focuses on the optimisation of the electrical contacts, along with the electrical characterisation and radiation-tolerance assessment of the first sensor prototypes produced.
publishDate 2022
dc.date.none.fl_str_mv 2022
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/11441/144565
https://doi.org/10.4028/p-hd601i
url https://hdl.handle.net/11441/144565
https://doi.org/10.4028/p-hd601i
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Materials Science Forum, 1062, 458-462.
RTC-2017-6369-3
https://www.scientific.net/MSF.1062.458.pdf
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Trans Tech Publications
publisher.none.fl_str_mv Trans Tech Publications
dc.source.none.fl_str_mv reponame:idUS. Depósito de Investigación de la Universidad de Sevilla
instname:Universidad de Sevilla (US)
instname_str Universidad de Sevilla (US)
reponame_str idUS. Depósito de Investigación de la Universidad de Sevilla
collection idUS. Depósito de Investigación de la Universidad de Sevilla
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300724

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