Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications

Due to their low leakage current, low noise levels, high thermal conductivity, and potential radiation hardness, SiC devices offer various advantages over Si devices in certain applications. As a result, they are being considered for operation in harsh environments, such as plasma diagnostic systems...

Descripción completa

Detalles Bibliográficos
Autores: Otero Ugobono, Sofía, Rafí Tatjer, Joan Marc, Godignon, Philippe, Pellegrini, Giulio, Rius Suñé, Gemma, Jiménez Ramos, María del Carmen, García López, Francisco Javier, García Osuna, Adrián
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2022
País:España
Institución:Universidad de Sevilla (US)
Repositorio:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:idus.us.es:11441/144565
Acceso en línea:https://hdl.handle.net/11441/144565
https://doi.org/10.4028/p-hd601i
Access Level:acceso abierto
Palabra clave:Epitaxial graphene
Detectors
Radiation hardness
Resistivity
CTLM
Descripción
Sumario:Due to their low leakage current, low noise levels, high thermal conductivity, and potential radiation hardness, SiC devices offer various advantages over Si devices in certain applications. As a result, they are being considered for operation in harsh environments, such as plasma diagnostic systems in future nuclear fusion reactors or in high energy physics applications. We report on relevant results of the GRACE project, which seeks to deliver a new generation of SiC sensors with graphene-enhanced contacts. Such devices are aimed to be radiation-hard and functional at high temperatures. The work presented in this paper focuses on the optimisation of the electrical contacts, along with the electrical characterisation and radiation-tolerance assessment of the first sensor prototypes produced.