Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices
In the present work, we report a solution-based strategy to produce crystallographically textured SnSe bulk nanomaterials and printed layers with optimized thermoelectric performance in the direction normal to the substrate. Our strategy is based on the formulation of a molecular precursor that can...
| Autores: | , , , , , , , , , , , |
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| Tipo de documento: | artigo |
| Data de publicação: | 2020 |
| País: | España |
| Recursos: | Universitat Autònoma de Barcelona |
| Repositório: | Dipòsit Digital de Documents de la UAB |
| Idioma: | inglês |
| OAI Identifier: | oai:ddd.uab.cat:235998 |
| Acesso em linha: | https://ddd.uab.cat/record/235998 https://dx.doi.org/urn:doi:10.1021/acsami.0c04331 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Molecular ink SnSe Thermoelectricity Printing Nanomaterial |
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Tin selenide molecular precursor for the solution processing of thermoelectric materials and devicesZhang, Yu|||0000-0002-0332-0013Liu, Yu|||0000-0001-7313-6740Xing, Congcong|||0000-0001-7674-6720Zhang, Ting|||0000-0002-0317-9662Li, Mengyao|||0000-0002-9082-7938Pacios Pujadó, Merce|||0000-0002-3559-4561Yu, Xiaoting|||0000-0003-0457-4047Arbiol i Cobos, Jordi|||0000-0002-0695-1726Llorca, Jordi|||0000-0002-7447-9582Cadavid, Doris|||0000-0002-1376-6078Ibáñez, Maria|||0000-0001-5013-2843Cabot i Codina, Andreu|||0000-0002-7533-3251Molecular inkSnSeThermoelectricityPrintingNanomaterialIn the present work, we report a solution-based strategy to produce crystallographically textured SnSe bulk nanomaterials and printed layers with optimized thermoelectric performance in the direction normal to the substrate. Our strategy is based on the formulation of a molecular precursor that can be continuously decomposed to produce a SnSe powder or printed into predefined patterns. The precursor formulation and decomposition conditions are optimized to produce pure phase 2D SnSe nanoplates. The printed layer and the bulk material obtained after hot press displays a clear preferential orientation of the crystallographic domains, resulting in an ultralow thermal conductivity of 0.55 W m-1 K-1 in the direction normal to the substrate. Such textured nanomaterials present highly anisotropic properties with the best thermoelectric performance in plane, i.e., in the directions parallel to the substrate, which coincide with the crystallographic bc plane of SnSe. This is an unfortunate characteristic because thermoelectric devices are designed to create/harvest temperature gradients in the direction normal to the substrate. We further demonstrate that this limitation can be overcome with the introduction of small amounts of tellurium in the precursor. The presence of tellurium allows one to reduce the band gap and increase both the charge carrier concentration and the mobility, especially the cross plane, with a minimal decrease of the Seebeck coefficient. These effects translate into record out of plane ZT values at 800 K. 22020-01-0120202020-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/235998https://dx.doi.org/urn:doi:10.1021/acsami.0c04331reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengEuropean Commission https://doi.org/10.13039/501100000780 754411Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 RTI2018-093996-B-C31Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2017-0706Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 ENE2017-85087-C3Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 ENE2016-77798-C4-3-RAgència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2017/SGR-327Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2017/SGR-128open accesshttp://purl.org/coar/access_right/c_abf2Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.https://rightsstatements.org/vocab/InC/1.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2359982026-06-06T12:50:31Z |
| dc.title.none.fl_str_mv |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices |
| title |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices |
| spellingShingle |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices Zhang, Yu|||0000-0002-0332-0013 Molecular ink SnSe Thermoelectricity Printing Nanomaterial |
| title_short |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices |
| title_full |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices |
| title_fullStr |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices |
| title_full_unstemmed |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices |
| title_sort |
Tin selenide molecular precursor for the solution processing of thermoelectric materials and devices |
| dc.creator.none.fl_str_mv |
Zhang, Yu|||0000-0002-0332-0013 Liu, Yu|||0000-0001-7313-6740 Xing, Congcong|||0000-0001-7674-6720 Zhang, Ting|||0000-0002-0317-9662 Li, Mengyao|||0000-0002-9082-7938 Pacios Pujadó, Merce|||0000-0002-3559-4561 Yu, Xiaoting|||0000-0003-0457-4047 Arbiol i Cobos, Jordi|||0000-0002-0695-1726 Llorca, Jordi|||0000-0002-7447-9582 Cadavid, Doris|||0000-0002-1376-6078 Ibáñez, Maria|||0000-0001-5013-2843 Cabot i Codina, Andreu|||0000-0002-7533-3251 |
| author |
Zhang, Yu|||0000-0002-0332-0013 |
| author_facet |
Zhang, Yu|||0000-0002-0332-0013 Liu, Yu|||0000-0001-7313-6740 Xing, Congcong|||0000-0001-7674-6720 Zhang, Ting|||0000-0002-0317-9662 Li, Mengyao|||0000-0002-9082-7938 Pacios Pujadó, Merce|||0000-0002-3559-4561 Yu, Xiaoting|||0000-0003-0457-4047 Arbiol i Cobos, Jordi|||0000-0002-0695-1726 Llorca, Jordi|||0000-0002-7447-9582 Cadavid, Doris|||0000-0002-1376-6078 Ibáñez, Maria|||0000-0001-5013-2843 Cabot i Codina, Andreu|||0000-0002-7533-3251 |
| author_role |
author |
| author2 |
Liu, Yu|||0000-0001-7313-6740 Xing, Congcong|||0000-0001-7674-6720 Zhang, Ting|||0000-0002-0317-9662 Li, Mengyao|||0000-0002-9082-7938 Pacios Pujadó, Merce|||0000-0002-3559-4561 Yu, Xiaoting|||0000-0003-0457-4047 Arbiol i Cobos, Jordi|||0000-0002-0695-1726 Llorca, Jordi|||0000-0002-7447-9582 Cadavid, Doris|||0000-0002-1376-6078 Ibáñez, Maria|||0000-0001-5013-2843 Cabot i Codina, Andreu|||0000-0002-7533-3251 |
| author2_role |
author author author author author author author author author author author |
| dc.subject.none.fl_str_mv |
Molecular ink SnSe Thermoelectricity Printing Nanomaterial |
| topic |
Molecular ink SnSe Thermoelectricity Printing Nanomaterial |
| description |
In the present work, we report a solution-based strategy to produce crystallographically textured SnSe bulk nanomaterials and printed layers with optimized thermoelectric performance in the direction normal to the substrate. Our strategy is based on the formulation of a molecular precursor that can be continuously decomposed to produce a SnSe powder or printed into predefined patterns. The precursor formulation and decomposition conditions are optimized to produce pure phase 2D SnSe nanoplates. The printed layer and the bulk material obtained after hot press displays a clear preferential orientation of the crystallographic domains, resulting in an ultralow thermal conductivity of 0.55 W m-1 K-1 in the direction normal to the substrate. Such textured nanomaterials present highly anisotropic properties with the best thermoelectric performance in plane, i.e., in the directions parallel to the substrate, which coincide with the crystallographic bc plane of SnSe. This is an unfortunate characteristic because thermoelectric devices are designed to create/harvest temperature gradients in the direction normal to the substrate. We further demonstrate that this limitation can be overcome with the introduction of small amounts of tellurium in the precursor. The presence of tellurium allows one to reduce the band gap and increase both the charge carrier concentration and the mobility, especially the cross plane, with a minimal decrease of the Seebeck coefficient. These effects translate into record out of plane ZT values at 800 K. |
| publishDate |
2020 |
| dc.date.none.fl_str_mv |
2 2020-01-01 2020 2020-01-01 |
| dc.type.none.fl_str_mv |
Article http://purl.org/coar/resource_type/c_6501 AM http://purl.org/coar/version/c_ab4af688f83e57aa |
| dc.type.openaire.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| dc.identifier.none.fl_str_mv |
https://ddd.uab.cat/record/235998 https://dx.doi.org/urn:doi:10.1021/acsami.0c04331 |
| url |
https://ddd.uab.cat/record/235998 https://dx.doi.org/urn:doi:10.1021/acsami.0c04331 |
| dc.language.none.fl_str_mv |
Inglés eng |
| language_invalid_str_mv |
Inglés |
| language |
eng |
| dc.relation.none.fl_str_mv |
European Commission https://doi.org/10.13039/501100000780 754411 Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 RTI2018-093996-B-C31 Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2017-0706 Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 ENE2017-85087-C3 Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 ENE2016-77798-C4-3-R Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2017/SGR-327 Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2017/SGR-128 |
| dc.rights.none.fl_str_mv |
open access http://purl.org/coar/access_right/c_abf2 https://rightsstatements.org/vocab/InC/1.0/ |
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info:eu-repo/semantics/openAccess |
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open access http://purl.org/coar/access_right/c_abf2 https://rightsstatements.org/vocab/InC/1.0/ |
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openAccess |
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application/pdf |
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reponame:Dipòsit Digital de Documents de la UAB instname:Universitat Autònoma de Barcelona |
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