Optical energies of AllnN epilayers
Optical energy gaps are measured for high-quality Al_(1-x)In_xN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with structural data to determine the compositional dependence o...
| Autor: | |
|---|---|
| Tipo de recurso: | artículo |
| Fecha de publicación: | 2008 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/52123 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/52123 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Vapor-phase epitaxy Quantum-wells Gan Alloys Films Física del estado sólido Física matemática 2211 Física del Estado Sólido |
| Sumario: | Optical energy gaps are measured for high-quality Al_(1-x)In_xN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with structural data to determine the compositional dependence of emission and absorption energies. The trend indicates a very large bowing parameter of ≈ to 6 eV and differences with earlier reports are discussed. Very large Stokes' shifts of 0.4-0.8 eV are observed in the composition range 0.13 < x < 0.24, increasing approximately linearly with InN fraction despite the change of sign of the piezoelectric field. |
|---|