Carrier Dynamics and microwave characteristics of GaAs-Based Quantum-Well Lasers
We investigate the effects of carrier capture and re-emission on the electrical impedance, equivalent circuit, and modulation response of quantum-well (QW) laser diodes. The electrical impedance is shown to be a sensitive function of the time constants associated with carrier capture/transport and c...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1999 |
| País: | España |
| Institución: | Universidad Rey Juan Carlos |
| Repositorio: | BURJC-Digital. Repositorio Institucional de la Universidad Rey Juan Carlos |
| OAI Identifier: | oai:burjcdigital.urjc.es:10115/12024 |
| Acceso en línea: | http://hdl.handle.net/10115/12024 |
| Access Level: | acceso abierto |
| Palabra clave: | ELECTRICAL-IMPEDANCE MEASUREMENTS TUNNELING INJECTION-LASERS MODULATION BANDWIDTH EQUIVALENT-CIRCUIT NONLINEAR GAIN MQW LASERS TRANSPORT CAPTURE DIFFUSION INGAASP 3307 Tecnología Electrónica |
| Sumario: | We investigate the effects of carrier capture and re-emission on the electrical impedance, equivalent circuit, and modulation response of quantum-well (QW) laser diodes. The electrical impedance is shown to be a sensitive function of the time constants associated with carrier capture/transport and carrier re-emission. We compare the theoretical results with measured values of the electrical impedance of high-speed InGaAs-GaAs multiple-quantum-well lasers fabricated using different epilayer structures with a common lateral structure. The experimental results agree well with the theoretical model, allowing us to extract the effective carrier escape time and the effective carrier lifetime in the QW's, and to estimate the effective carrier capture/transport time |
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