Partial substitution of the CdS buffer layer with interplay of fullerenes in kesterite solar cells
ver the last few decades, significant progress has been made with inorganic materials to enable them as next generation photovoltaic materials that can fulfil the demands of green energy. Cu2ZnSn(S,Se)4stands out as a p-type absorber material due to exemption from scarce and strategic elements and i...
| Autores: | , , , |
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| Tipo de documento: | artigo |
| Data de publicação: | 2020 |
| País: | España |
| Recursos: | Universitat Politècnica de Catalunya (UPC) |
| Repositório: | UPCommons. Portal del coneixement obert de la UPC |
| Idioma: | inglês |
| OAI Identifier: | oai:upcommons.upc.edu:2117/332040 |
| Acesso em linha: | https://hdl.handle.net/2117/332040 https://dx.doi.org/10.1039/d0tc02666b |
| Access Level: | Acceso aberto |
| Palavra-chave: | Solar cells Cu2ZnSns4 Kesterite Copper Zinc Tin Sulfide Cèl·lules solars Àrees temàtiques de la UPC::Enginyeria dels materials |
| Resumo: | ver the last few decades, significant progress has been made with inorganic materials to enable them as next generation photovoltaic materials that can fulfil the demands of green energy. Cu2ZnSn(S,Se)4stands out as a p-type absorber material due to exemption from scarce and strategic elements and its similarities with Cu2InGa(S,Se)4. Organic materials such as fullerenes and its derivatives are effective n-type semiconductors. We report the usage of n-type fullerene materials with kesterite-based absorbers in a thin film polycrystalline solar cell for the partial substitution of the CdS buffer layer with C60or C70fullerenes. Impedance measurements reveal that using C60as an interlayer increases the built-in potential, suggesting reduction in the interfacial recombination. This promotes charge conduction, resulting in an increased open circuit voltage and thus device performance. |
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