Non-stoichiometry effect and disorder in Cu2ZnSnS4 thin films obtained by flash evaporation: Raman scattering investigation
The cation disorder in Cu2ZnSnS4 thin films grown by flash evaporation of ZnS, CuS and SnS binary compounds has been studied by Raman spectroscopy. Process parameters such as the substrate temperature during the evaporation and the Ar pressure in the post-thermal treatment determined the samples...
| Autores: | , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2014 |
| País: | España |
| Institución: | Universidad Autónoma de Madrid |
| Repositorio: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.uam.es:10486/668734 |
| Acceso en línea: | http://hdl.handle.net/10486/668734 https://dx.doi.org/10.1016/j.actamat.2013.11.010 |
| Access Level: | acceso abierto |
| Palabra clave: | Cation disorder Cu2ZnSnS4 Non-stoichiometry Raman scattering Solar cells Flash evaporation Física |
| Sumario: | The cation disorder in Cu2ZnSnS4 thin films grown by flash evaporation of ZnS, CuS and SnS binary compounds has been studied by Raman spectroscopy. Process parameters such as the substrate temperature during the evaporation and the Ar pressure in the post-thermal treatment determined the samples' composition and Raman spectra. As a measure of cation disorder, the half-width and relative intensity of the Raman band peaking at 331-332 cm-1 is analysed. Comparison of the spectra for different samples of known composition showed that the relative intensity of the 331 cm-1 defect peak correlates with the previously reported theoretical prediction about enhancement of antisite defect formation in Cu2ZnSnS4 under "Cu-poor, Zn-rich" conditions. For "Cu-rich, Zn-poor" films, further experimental confirmation was obtained of the previously detected effect of the enhancement of cation disorder under intense optical excitation |
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