Characterization of nonvolatile switches based on 2-D multilayered hBN memristors for high-frequency applications

RF/microwave systems with large number of elements usually require switching elements with very small footprint, but providing very good electrical performance, low switching times, and good power-handling capabilities. In this sense, nonvolatile switches based on 2-D materials are emerging as a ver...

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Detalhes bibliográficos
Autores: Verdú, Jordi|||0000-0002-2434-7012, Amarilla Rios, Oscar Tobias|||0009-0002-4208-9237, Shen, Yaqing|||0000-0002-2325-5618, Pazos, Sebastián Matías|||0000-0002-7354-4530, Lanza, Mario|||0000-0003-4756-8632, Paco, Pedro de|||0000-0002-7628-7189
Formato: artículo
Fecha de publicación:2025
País:España
Recursos:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:315707
Acesso em linha:https://ddd.uab.cat/record/315707
https://dx.doi.org/urn:doi:10.1109/LMWT.2025.3576996
Access Level:acceso abierto
Palavra-chave:Substrates
Radio frequency
Diamond
Silicon
Metals
Switches
Resistance
Electrodes
Nonhomogeneous media
Current measurement
Descrição
Resumo:RF/microwave systems with large number of elements usually require switching elements with very small footprint, but providing very good electrical performance, low switching times, and good power-handling capabilities. In this sense, nonvolatile switches based on 2-D materials are emerging as a very suitable alternative to CMOS or MEMS-based technologies, mainly due to the capability of keeping a certain state with no energy consumption. In this article, different switches have been designed and fabricated using a multilayered structure based on 18 2-D hexagonal boron nitride (hBN) layers on three different substrates, high-resistivity silicon, quartz, and polycrystaline CVD diamond. The proposed device has been characterized in a frequency range up to 26.5GHz for these three substrates. The ON-state resistance and off-state capacitance have been extracted from experimental data using an equivalent electric model being 28~\Omega and 22 fF, leading to insertion losses (ILs) better than 2.5 dB in case of CVD diamond, and isolation better than 10 dB in case of quartz, for the on- and off-states, respectively.