Inkjet-printed h-BN memristors for hardware security

Inkjet printing electronics is a growing market that reached 7.8 billion USD in 2020 and that is expected to grow to ~23 billion USD by 2026, driven by applications like displays, photovoltaics, lighting, and radiofrequency identification. Incorporating two-dimensional (2D) materials into this techn...

Full description

Bibliographic Details
Authors: Zhu, Kaichen, Vescio, Giovanni|||0000-0002-2418-249X, González Torres, Sergio, Lopez Vidrier, Julià, Frieiro, Juan Luis, Pazos, Sebastian, Jing, Xu, Gao, Xu, Wang, Sui-Dong, Ascorbe Muruzábal, Joaquín, Ruiz Fuentes, Juan A., Cirera Hernandez, Albert, Garrido Fernández, Blas, Lanza, Mario
Format: article
Publication Date:2023
Country:España
Institution:Universitat Politècnica de Catalunya (UPC)
Repository:UPCommons. Portal del coneixement obert de la UPC
Language:English
OAI Identifier:oai:upcommons.upc.edu:2117/442929
Online Access:https://hdl.handle.net/2117/442929
https://dx.doi.org/10.1039/d3nr00030c
Access Level:Open access
Keyword:Inkjet printing
Àrees temàtiques de la UPC::Enginyeria electrònica
id ES_2de31ca004ba2c5db0c4abf6d99ba612
oai_identifier_str oai:upcommons.upc.edu:2117/442929
network_acronym_str ES
network_name_str España
repository_id_str
spelling Inkjet-printed h-BN memristors for hardware securityZhu, KaichenVescio, Giovanni|||0000-0002-2418-249XGonzález Torres, SergioLopez Vidrier, JuliàFrieiro, Juan LuisPazos, SebastianJing, XuGao, XuWang, Sui-DongAscorbe Muruzábal, JoaquínRuiz Fuentes, Juan A.Cirera Hernandez, AlbertGarrido Fernández, BlasLanza, MarioInkjet printingÀrees temàtiques de la UPC::Enginyeria electrònicaInkjet printing electronics is a growing market that reached 7.8 billion USD in 2020 and that is expected to grow to ~23 billion USD by 2026, driven by applications like displays, photovoltaics, lighting, and radiofrequency identification. Incorporating two-dimensional (2D) materials into this technology could further enhance the properties of the existing devices and/or circuits, as well as enable the development of new concept applications. Along these lines, here we report an easy and cheap process to synthesize inks made of multilayer hexagonal boron nitride (h-BN)—an insulating 2D layered material—by the liquid-phase exfoliation method and use them to fabricate memristors. The devices exhibit multiple stochastic phenomena that are very attractive for use as entropy sources in electronic circuits for data encryption (physical unclonable functions [PUFs], true random number generators [TRNGs]), such as: (i) a very disperse initial resistance and dielectric breakdown voltage, (ii) volatile unipolar and non-volatile bipolar resistive switching (RS) with a high cycle-to-cycle variability of the state resistances, and (iii) random telegraph noise (RTN) current fluctuations. The clue for the observation of these stochastic phenomena resides on the unpredictable nature of the device structure derived from the inkjet printing process (i.e., thickness fluctuations, random flake orientations), which allows fabricating electronic devices with different electronic properties. The easy-to-make and cheap memristors here developed are ideal to encrypt the information produced by multiple types of objects and/or products, and the versatility of the inkjet printing method, which allows effortless deposition on any substrate, makes our devices especially attractive for flexible and wearable devices within the internet-of-things.20232023-01-0120252025-10-02journal articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/2117/442929https://dx.doi.org/10.1039/d3nr00030creponame:UPCommons. Portal del coneixement obert de la UPCinstname:Universitat Politècnica de Catalunya (UPC)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Attribution 4.0 Internationalhttp://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:upcommons.upc.edu:2117/4429292026-05-27T15:37:01Z
dc.title.none.fl_str_mv Inkjet-printed h-BN memristors for hardware security
title Inkjet-printed h-BN memristors for hardware security
spellingShingle Inkjet-printed h-BN memristors for hardware security
Zhu, Kaichen
Inkjet printing
Àrees temàtiques de la UPC::Enginyeria electrònica
title_short Inkjet-printed h-BN memristors for hardware security
title_full Inkjet-printed h-BN memristors for hardware security
title_fullStr Inkjet-printed h-BN memristors for hardware security
title_full_unstemmed Inkjet-printed h-BN memristors for hardware security
title_sort Inkjet-printed h-BN memristors for hardware security
dc.creator.none.fl_str_mv Zhu, Kaichen
Vescio, Giovanni|||0000-0002-2418-249X
González Torres, Sergio
Lopez Vidrier, Julià
Frieiro, Juan Luis
Pazos, Sebastian
Jing, Xu
Gao, Xu
Wang, Sui-Dong
Ascorbe Muruzábal, Joaquín
Ruiz Fuentes, Juan A.
Cirera Hernandez, Albert
Garrido Fernández, Blas
Lanza, Mario
author Zhu, Kaichen
author_facet Zhu, Kaichen
Vescio, Giovanni|||0000-0002-2418-249X
González Torres, Sergio
Lopez Vidrier, Julià
Frieiro, Juan Luis
Pazos, Sebastian
Jing, Xu
Gao, Xu
Wang, Sui-Dong
Ascorbe Muruzábal, Joaquín
Ruiz Fuentes, Juan A.
Cirera Hernandez, Albert
Garrido Fernández, Blas
Lanza, Mario
author_role author
author2 Vescio, Giovanni|||0000-0002-2418-249X
González Torres, Sergio
Lopez Vidrier, Julià
Frieiro, Juan Luis
Pazos, Sebastian
Jing, Xu
Gao, Xu
Wang, Sui-Dong
Ascorbe Muruzábal, Joaquín
Ruiz Fuentes, Juan A.
Cirera Hernandez, Albert
Garrido Fernández, Blas
Lanza, Mario
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Inkjet printing
Àrees temàtiques de la UPC::Enginyeria electrònica
topic Inkjet printing
Àrees temàtiques de la UPC::Enginyeria electrònica
description Inkjet printing electronics is a growing market that reached 7.8 billion USD in 2020 and that is expected to grow to ~23 billion USD by 2026, driven by applications like displays, photovoltaics, lighting, and radiofrequency identification. Incorporating two-dimensional (2D) materials into this technology could further enhance the properties of the existing devices and/or circuits, as well as enable the development of new concept applications. Along these lines, here we report an easy and cheap process to synthesize inks made of multilayer hexagonal boron nitride (h-BN)—an insulating 2D layered material—by the liquid-phase exfoliation method and use them to fabricate memristors. The devices exhibit multiple stochastic phenomena that are very attractive for use as entropy sources in electronic circuits for data encryption (physical unclonable functions [PUFs], true random number generators [TRNGs]), such as: (i) a very disperse initial resistance and dielectric breakdown voltage, (ii) volatile unipolar and non-volatile bipolar resistive switching (RS) with a high cycle-to-cycle variability of the state resistances, and (iii) random telegraph noise (RTN) current fluctuations. The clue for the observation of these stochastic phenomena resides on the unpredictable nature of the device structure derived from the inkjet printing process (i.e., thickness fluctuations, random flake orientations), which allows fabricating electronic devices with different electronic properties. The easy-to-make and cheap memristors here developed are ideal to encrypt the information produced by multiple types of objects and/or products, and the versatility of the inkjet printing method, which allows effortless deposition on any substrate, makes our devices especially attractive for flexible and wearable devices within the internet-of-things.
publishDate 2023
dc.date.none.fl_str_mv 2023
2023-01-01
2025
2025-10-02
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/2117/442929
https://dx.doi.org/10.1039/d3nr00030c
url https://hdl.handle.net/2117/442929
https://dx.doi.org/10.1039/d3nr00030c
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution 4.0 International
http://creativecommons.org/licenses/by/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution 4.0 International
http://creativecommons.org/licenses/by/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:UPCommons. Portal del coneixement obert de la UPC
instname:Universitat Politècnica de Catalunya (UPC)
instname_str Universitat Politècnica de Catalunya (UPC)
reponame_str UPCommons. Portal del coneixement obert de la UPC
collection UPCommons. Portal del coneixement obert de la UPC
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869405361294802944
score 15,811543

Similar Items