Surface dielectric tunnel barrier induced by Mn doping in SnO_2 micro- and nanostructures

Electrical properties of undoped and Mn doped SnO2 microplates and rods are studied by electron beam induced current (EBIC) in a scanning electron microscope (SEM), and I-V curves acquired at room temperature. AFM measurements reveal the formation of numerous terraces at the (-101) surface of the an...

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Detalles Bibliográficos
Autores: Maestre Varea, David, Cremades Rodríguez, Ana Isabel, Herrera, Manuel
Tipo de recurso: artículo
Fecha de publicación:2018
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/13086
Acceso en línea:https://hdl.handle.net/20.500.14352/13086
Access Level:acceso abierto
Palabra clave:538.9
Beam-induced current
Grain-boundaries
Oxide
Photoluminescence
Nanowires
Films
Doping
Electron beam induced current
Microplate
SnO2
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
id ES_2da706cf57587422cf097da7ce85f2eb
oai_identifier_str oai:docta.ucm.es:20.500.14352/13086
network_acronym_str ES
network_name_str España
repository_id_str
spelling Surface dielectric tunnel barrier induced by Mn doping in SnO_2 micro- and nanostructuresMaestre Varea, DavidCremades Rodríguez, Ana IsabelHerrera, Manuel538.9Beam-induced currentGrain-boundariesOxidePhotoluminescenceNanowiresFilmsDopingElectron beam induced currentMicroplateSnO2Física de materialesFísica del estado sólido2211 Física del Estado SólidoElectrical properties of undoped and Mn doped SnO2 microplates and rods are studied by electron beam induced current (EBIC) in a scanning electron microscope (SEM), and I-V curves acquired at room temperature. AFM measurements reveal the formation of numerous terraces at the (-101) surface of the analyzed Mn-doped SnO2 microplates, which also exhibit high carrier recombination processes at their central region, as confirmed by combined EBIC and cathodoluminescence (CL) measurements. A diffusion length for minority carriers about 205nm is obtained by EBIC measurements. Different electrical conduction mechanisms, such as Fowler-Nordheim, direct tunneling and Poole-Frenkel, are evaluated in the electrical analysis of the samples. Mn doped microplates show lower conductivity than the undoped microds. Moreover the height of the surface tunnel barrier is increased by Mn doping, as confirmed by the analysis of the I-V curves acquired under transversal configuration. A value of the relative dielectric constant E-r about 7.3 is estimated for the probed SnO2 microstructures.WileyUniversidad Complutense de Madrid20182018-10-1020182018-10-10journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/13086reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/130862026-06-02T12:44:21Z
dc.title.none.fl_str_mv Surface dielectric tunnel barrier induced by Mn doping in SnO_2 micro- and nanostructures
title Surface dielectric tunnel barrier induced by Mn doping in SnO_2 micro- and nanostructures
spellingShingle Surface dielectric tunnel barrier induced by Mn doping in SnO_2 micro- and nanostructures
Maestre Varea, David
538.9
Beam-induced current
Grain-boundaries
Oxide
Photoluminescence
Nanowires
Films
Doping
Electron beam induced current
Microplate
SnO2
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
title_short Surface dielectric tunnel barrier induced by Mn doping in SnO_2 micro- and nanostructures
title_full Surface dielectric tunnel barrier induced by Mn doping in SnO_2 micro- and nanostructures
title_fullStr Surface dielectric tunnel barrier induced by Mn doping in SnO_2 micro- and nanostructures
title_full_unstemmed Surface dielectric tunnel barrier induced by Mn doping in SnO_2 micro- and nanostructures
title_sort Surface dielectric tunnel barrier induced by Mn doping in SnO_2 micro- and nanostructures
dc.creator.none.fl_str_mv Maestre Varea, David
Cremades Rodríguez, Ana Isabel
Herrera, Manuel
author Maestre Varea, David
author_facet Maestre Varea, David
Cremades Rodríguez, Ana Isabel
Herrera, Manuel
author_role author
author2 Cremades Rodríguez, Ana Isabel
Herrera, Manuel
author2_role author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Beam-induced current
Grain-boundaries
Oxide
Photoluminescence
Nanowires
Films
Doping
Electron beam induced current
Microplate
SnO2
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
topic 538.9
Beam-induced current
Grain-boundaries
Oxide
Photoluminescence
Nanowires
Films
Doping
Electron beam induced current
Microplate
SnO2
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
description Electrical properties of undoped and Mn doped SnO2 microplates and rods are studied by electron beam induced current (EBIC) in a scanning electron microscope (SEM), and I-V curves acquired at room temperature. AFM measurements reveal the formation of numerous terraces at the (-101) surface of the analyzed Mn-doped SnO2 microplates, which also exhibit high carrier recombination processes at their central region, as confirmed by combined EBIC and cathodoluminescence (CL) measurements. A diffusion length for minority carriers about 205nm is obtained by EBIC measurements. Different electrical conduction mechanisms, such as Fowler-Nordheim, direct tunneling and Poole-Frenkel, are evaluated in the electrical analysis of the samples. Mn doped microplates show lower conductivity than the undoped microds. Moreover the height of the surface tunnel barrier is increased by Mn doping, as confirmed by the analysis of the I-V curves acquired under transversal configuration. A value of the relative dielectric constant E-r about 7.3 is estimated for the probed SnO2 microstructures.
publishDate 2018
dc.date.none.fl_str_mv 2018
2018-10-10
2018
2018-10-10
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/13086
url https://hdl.handle.net/20.500.14352/13086
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Wiley
publisher.none.fl_str_mv Wiley
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869405335120248832
score 15,300724