Design of a 1-V 90-nm CMOS adaptive LNA for multi-standard wireless receivers
[EN]: This paper presents the design of a reconfigurable Low-Noise Amplifier (LNA) for the next generation of wireless hand-held devices. The circuit, based on a lumped-approach design and implemented in a 90nm standard RF CMOS technology, consists of a two-stage topology that combines inductive-sou...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2008 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/86365 |
| Acceso en línea: | http://hdl.handle.net/10261/86365 |
| Access Level: | acceso abierto |
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Design of a 1-V 90-nm CMOS adaptive LNA for multi-standard wireless receiversBecerra-Alvarez, Edwin C.Sandoval-Ibarra, F.Rosa, José M. de la[EN]: This paper presents the design of a reconfigurable Low-Noise Amplifier (LNA) for the next generation of wireless hand-held devices. The circuit, based on a lumped-approach design and implemented in a 90nm standard RF CMOS technology, consists of a two-stage topology that combines inductive-source degeneration with MOS-varactor based tuning networks and programmable bias currents, in order to adapt its performance to different standard specifications with reduced number of inductors and minimum power dissipation. As an application, the LNA is designed to cope with the requirements of GSM (PCS1900), WCDMA, Bluetooth and WLAN (IEEE 802.11b-g). Simulation results, including technology parasitics, demonstrate correct operation of the LNA for these standards, featuring NF<1.77dB, S21 >16dB, S11 <-5.5dB, S22 <-5.5 dB and IIP3>-3.3 dBm over the 1.85-2.48 GHz band, with an adaptive power consumption between 25.3 mW and 53.3mW. The layout of the LNA occupies an area of 1.18×1.18 μm2.[ES]: En este artículo se presenta el diseño de un LNA (del Inglés Low–Noise Amplifier) configurable para la próxima generación de dispositivos digitales personales. El circuito, diseñado con la aproximación de circuitos concentrados e implementado en una tecnología CMOS, 90nm, de RF, consta de una topología formada por dos etapas que combina degeneración inductiva de fuente, redes de entonado basada en varactores, y circuitos de polarización programables para adaptar el desempeño a las diferentes especificaciones del estándar con reducido número de inductores y mínima disipación de potencia. Como aplicación, el LNA que se diseña satisface los requerimientos de GSM (PCS 1900), WCDMA, Bluetooth y WLAN (IEEE 802.11b–g). Los resultados de simulación, incluyendo el efecto de los elementos parásitos, demuestran una correcta operación del para LNA los estándares mencionados, obteniendo NF<1.77 dB, S2116dB, S11 <–5.5 dB, S22 <–5.5 dB y IIP3>–3.3 dBm en la banda 1.85–2.48 GHz band, con un consumo de potencia entre 25.3mW y 53.3mW. El patrón geométrico del LNA ocupa un área de 1.18 x 1.18 µm2.This work has been supported by the Spanish ministry of Science and Education (with support from the European Regional development Fund) under contract TEC2004-01752/MIC, the Spanish Ministry of Industry Tourism and Commerce (FIT-330100-2006-134 SPIRIT) and the CSIC_(Spain)-CONACyT_(Mexico) cooperation project (2005MX0006-J110.481/2006). One of the authors (ECBA) wishes to thank CONACyT_(Mexico) for its financial support.Peer ReviewedSociedad Mexicana de Física2013201320082013info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501http://hdl.handle.net/10261/86365reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglésinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/863652026-05-22T06:33:51Z |
| dc.title.none.fl_str_mv |
Design of a 1-V 90-nm CMOS adaptive LNA for multi-standard wireless receivers |
| title |
Design of a 1-V 90-nm CMOS adaptive LNA for multi-standard wireless receivers |
| spellingShingle |
Design of a 1-V 90-nm CMOS adaptive LNA for multi-standard wireless receivers Becerra-Alvarez, Edwin C. |
| title_short |
Design of a 1-V 90-nm CMOS adaptive LNA for multi-standard wireless receivers |
| title_full |
Design of a 1-V 90-nm CMOS adaptive LNA for multi-standard wireless receivers |
| title_fullStr |
Design of a 1-V 90-nm CMOS adaptive LNA for multi-standard wireless receivers |
| title_full_unstemmed |
Design of a 1-V 90-nm CMOS adaptive LNA for multi-standard wireless receivers |
| title_sort |
Design of a 1-V 90-nm CMOS adaptive LNA for multi-standard wireless receivers |
| dc.creator.none.fl_str_mv |
Becerra-Alvarez, Edwin C. Sandoval-Ibarra, F. Rosa, José M. de la |
| author |
Becerra-Alvarez, Edwin C. |
| author_facet |
Becerra-Alvarez, Edwin C. Sandoval-Ibarra, F. Rosa, José M. de la |
| author_role |
author |
| author2 |
Sandoval-Ibarra, F. Rosa, José M. de la |
| author2_role |
author author |
| description |
[EN]: This paper presents the design of a reconfigurable Low-Noise Amplifier (LNA) for the next generation of wireless hand-held devices. The circuit, based on a lumped-approach design and implemented in a 90nm standard RF CMOS technology, consists of a two-stage topology that combines inductive-source degeneration with MOS-varactor based tuning networks and programmable bias currents, in order to adapt its performance to different standard specifications with reduced number of inductors and minimum power dissipation. As an application, the LNA is designed to cope with the requirements of GSM (PCS1900), WCDMA, Bluetooth and WLAN (IEEE 802.11b-g). Simulation results, including technology parasitics, demonstrate correct operation of the LNA for these standards, featuring NF<1.77dB, S21 >16dB, S11 <-5.5dB, S22 <-5.5 dB and IIP3>-3.3 dBm over the 1.85-2.48 GHz band, with an adaptive power consumption between 25.3 mW and 53.3mW. The layout of the LNA occupies an area of 1.18×1.18 μm2. |
| publishDate |
2008 |
| dc.date.none.fl_str_mv |
2008 2013 2013 2013 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article http://purl.org/coar/resource_type/c_6501 |
| format |
article |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/10261/86365 |
| url |
http://hdl.handle.net/10261/86365 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.publisher.none.fl_str_mv |
Sociedad Mexicana de Física |
| publisher.none.fl_str_mv |
Sociedad Mexicana de Física |
| dc.source.none.fl_str_mv |
reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC instname:Consejo Superior de Investigaciones Científicas (CSIC) |
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Consejo Superior de Investigaciones Científicas (CSIC) |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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1869405165330628608 |
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15.812429 |