Functionalising the gate dielectric of organic field-effect transistors with self-assembled monolayers: effect of molecular electronic structure on device performance

The performance of organic field-effect transistors (OFETs) is determined by the semiconductor/dielectric interface. In this work, we report the functionalization of an OFET dielectric with a novel electroactive self-assembled monolayer (SAM) based on a polychlorotriphenylmethyl (PTM) radical deriva...

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Autores: Riera Galindo, Sergi, Chen, Lijia, Maglione, Maria Serena, Zhang, Qiaoming, Bromley, Stefan T., Rovira, Concepció, Mas Torrent, Marta
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2022
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/269307
Acceso en línea:http://hdl.handle.net/10261/269307
https://api.elsevier.com/content/abstract/scopus_id/85127360111
Access Level:acceso abierto
Palabra clave:Electroactive organic radical
OFET
SAM
Small molecule semiconductor
Surface functionalization
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spelling Functionalising the gate dielectric of organic field-effect transistors with self-assembled monolayers: effect of molecular electronic structure on device performanceRiera Galindo, SergiChen, LijiaMaglione, Maria SerenaZhang, QiaomingBromley, Stefan T.Rovira, ConcepcióMas Torrent, MartaElectroactive organic radicalOFETSAMSmall molecule semiconductorSurface functionalizationThe performance of organic field-effect transistors (OFETs) is determined by the semiconductor/dielectric interface. In this work, we report the functionalization of an OFET dielectric with a novel electroactive self-assembled monolayer (SAM) based on a polychlorotriphenylmethyl (PTM) radical derivative and its αH non electroactive counterpart. The influence of these SAMs on p- and n-type OFETs is explored. We observe that differences in the accessibility of the electronic energy levels of the PTM derivatives has a significant impact on the device performance. Both SAMs are hydrophobic, which lead to smoother pentacene films. In addition, the radical electroactive SAMs act as p-dopant in pentacene transistors and as charge trap in fullerene C60 OFETs. This approach can be useful for fabricating organic electronic devices with tailored properties.The authors also thank the Generalitat de Catalunya (2017-SGR-918 and 2017-SGR-13), and the Spanish Ministry through the projects RTI2018-095460-B-I00 and GENESIS PID2019-111682RB-I00, and through the “Severo Ochoa” Programme for Centers of Excellence in R&D (FUNFUTURE CEX2019-000917-S) and a María de Maeztu grant (MDM-2017–0767). S.R-G. acknowledges support from the Marie Skłodowska Curie Cofund, Beatriu de Pinós Fellowship (AGAUR-2019 BP 00200), and L-C. and Q.Z. acknowledge the Chinese Research Council.With funding from the Spanish government through the ‘Severo Ochoa Centre of Excellence’ accreditation (CEX2019-000917-S).Peer reviewedSpringer NatureGeneralitat de CatalunyaMinisterio de Ciencia, Innovación y Universidades (España)Chinese Academy of SciencesMas Torrent, Marta [0000-0002-1586-005X]Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202220222022info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Postprintinfo:eu-repo/semantics/acceptedVersionhttp://hdl.handle.net/10261/269307https://api.elsevier.com/content/abstract/scopus_id/85127360111reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/RTI2018-095460-B-I00info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2019-111682RB-I00info:eu-repo/grantAgreement/MICIU/Plan Estatal de investigación Científica y Técnica y de Innovación 2017-2020/CEX2019-000917-Sinfo:eu-repo/grantAgreement/MICIU/Plan Estatal de investigación Científica y Técnica y de Innovación 2017-2020/MDM-2017–0767Applied Physics A: Materials Science and Processinghttp://dx.doi.org/10.1007/s00339-022-05429-9Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/2693072026-05-22T06:33:51Z
dc.title.none.fl_str_mv Functionalising the gate dielectric of organic field-effect transistors with self-assembled monolayers: effect of molecular electronic structure on device performance
title Functionalising the gate dielectric of organic field-effect transistors with self-assembled monolayers: effect of molecular electronic structure on device performance
spellingShingle Functionalising the gate dielectric of organic field-effect transistors with self-assembled monolayers: effect of molecular electronic structure on device performance
Riera Galindo, Sergi
Electroactive organic radical
OFET
SAM
Small molecule semiconductor
Surface functionalization
title_short Functionalising the gate dielectric of organic field-effect transistors with self-assembled monolayers: effect of molecular electronic structure on device performance
title_full Functionalising the gate dielectric of organic field-effect transistors with self-assembled monolayers: effect of molecular electronic structure on device performance
title_fullStr Functionalising the gate dielectric of organic field-effect transistors with self-assembled monolayers: effect of molecular electronic structure on device performance
title_full_unstemmed Functionalising the gate dielectric of organic field-effect transistors with self-assembled monolayers: effect of molecular electronic structure on device performance
title_sort Functionalising the gate dielectric of organic field-effect transistors with self-assembled monolayers: effect of molecular electronic structure on device performance
dc.creator.none.fl_str_mv Riera Galindo, Sergi
Chen, Lijia
Maglione, Maria Serena
Zhang, Qiaoming
Bromley, Stefan T.
Rovira, Concepció
Mas Torrent, Marta
author Riera Galindo, Sergi
author_facet Riera Galindo, Sergi
Chen, Lijia
Maglione, Maria Serena
Zhang, Qiaoming
Bromley, Stefan T.
Rovira, Concepció
Mas Torrent, Marta
author_role author
author2 Chen, Lijia
Maglione, Maria Serena
Zhang, Qiaoming
Bromley, Stefan T.
Rovira, Concepció
Mas Torrent, Marta
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Generalitat de Catalunya
Ministerio de Ciencia, Innovación y Universidades (España)
Chinese Academy of Sciences
Mas Torrent, Marta [0000-0002-1586-005X]
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Electroactive organic radical
OFET
SAM
Small molecule semiconductor
Surface functionalization
topic Electroactive organic radical
OFET
SAM
Small molecule semiconductor
Surface functionalization
description The performance of organic field-effect transistors (OFETs) is determined by the semiconductor/dielectric interface. In this work, we report the functionalization of an OFET dielectric with a novel electroactive self-assembled monolayer (SAM) based on a polychlorotriphenylmethyl (PTM) radical derivative and its αH non electroactive counterpart. The influence of these SAMs on p- and n-type OFETs is explored. We observe that differences in the accessibility of the electronic energy levels of the PTM derivatives has a significant impact on the device performance. Both SAMs are hydrophobic, which lead to smoother pentacene films. In addition, the radical electroactive SAMs act as p-dopant in pentacene transistors and as charge trap in fullerene C60 OFETs. This approach can be useful for fabricating organic electronic devices with tailored properties.
publishDate 2022
dc.date.none.fl_str_mv 2022
2022
2022
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Postprint
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/269307
https://api.elsevier.com/content/abstract/scopus_id/85127360111
url http://hdl.handle.net/10261/269307
https://api.elsevier.com/content/abstract/scopus_id/85127360111
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/RTI2018-095460-B-I00
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2019-111682RB-I00
info:eu-repo/grantAgreement/MICIU/Plan Estatal de investigación Científica y Técnica y de Innovación 2017-2020/CEX2019-000917-S
info:eu-repo/grantAgreement/MICIU/Plan Estatal de investigación Científica y Técnica y de Innovación 2017-2020/MDM-2017–0767
Applied Physics A: Materials Science and Processing
http://dx.doi.org/10.1007/s00339-022-05429-9
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Springer Nature
publisher.none.fl_str_mv Springer Nature
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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