Functionalising the gate dielectric of organic field-effect transistors with self-assembled monolayers: effect of molecular electronic structure on device performance
The performance of organic field-effect transistors (OFETs) is determined by the semiconductor/dielectric interface. In this work, we report the functionalization of an OFET dielectric with a novel electroactive self-assembled monolayer (SAM) based on a polychlorotriphenylmethyl (PTM) radical deriva...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2022 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/269307 |
| Acceso en línea: | http://hdl.handle.net/10261/269307 https://api.elsevier.com/content/abstract/scopus_id/85127360111 |
| Access Level: | acceso abierto |
| Palabra clave: | Electroactive organic radical OFET SAM Small molecule semiconductor Surface functionalization |
| Sumario: | The performance of organic field-effect transistors (OFETs) is determined by the semiconductor/dielectric interface. In this work, we report the functionalization of an OFET dielectric with a novel electroactive self-assembled monolayer (SAM) based on a polychlorotriphenylmethyl (PTM) radical derivative and its αH non electroactive counterpart. The influence of these SAMs on p- and n-type OFETs is explored. We observe that differences in the accessibility of the electronic energy levels of the PTM derivatives has a significant impact on the device performance. Both SAMs are hydrophobic, which lead to smoother pentacene films. In addition, the radical electroactive SAMs act as p-dopant in pentacene transistors and as charge trap in fullerene C60 OFETs. This approach can be useful for fabricating organic electronic devices with tailored properties. |
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