Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy

The following article appeared in Journal of Applied Physics 115.3 (2014): 034307 and may be found at (http://scitation.aip.org/content/aip/journal/jap/115/3/10.1063/1.4862742)

Detalles Bibliográficos
Autores: García Núñez, Carlos, Braña de Cal, Alejandro Francisco, Pau Vizcaíno, José Luis, Ghita, D., García Carretero, Basilio Javier, Shen, G., Wilbert, D.S., Kim, S.M., Kung, P.
Tipo de recurso: artículo
Fecha de publicación:2014
País:España
Institución:Universidad Autónoma de Madrid
Repositorio:Biblos-e Archivo. Repositorio Institucional de la UAM
Idioma:inglés
OAI Identifier:oai:repositorio.uam.es:10486/665971
Acceso en línea:http://hdl.handle.net/10486/665971
https://dx.doi.org/10.1063/1.4862742
Access Level:acceso abierto
Palabra clave:III-V semiconductors
Phonons
Crystal defects
Semiconductor growth
Fluid drops
Física
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spelling Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxyGarcía Núñez, CarlosBraña de Cal, Alejandro FranciscoPau Vizcaíno, José LuisGhita, D.García Carretero, Basilio JavierShen, G.Wilbert, D.S.Kim, S.M.Kung, P.III-V semiconductorsPhononsCrystal defectsSemiconductor growthFluid dropsFísicaThe following article appeared in Journal of Applied Physics 115.3 (2014): 034307 and may be found at (http://scitation.aip.org/content/aip/journal/jap/115/3/10.1063/1.4862742)Surface optical (SO) phonons were studied by Raman spectroscopy in GaAs nanowires (NWs) grown by Ga-assisted chemical beam epitaxy on oxidized Si(111) substrates. NW diameters and lengths ranging between 40 and 65 nm and between 0.3 and 1.3 μm, respectively, were observed under different growth conditions. The analysis of the Raman peak shape associated to either longitudinal or surface optical modes gave important information about the crystal quality of grown NWs. Phonon confinement model was used to calculate the density of defects as a function of the NW diameter resulting in values between 0.02 and 0.03 defects/nm, indicating the high uniformity obtained on NWs cross section size during growth. SO mode shows frequency downshifting as NW diameter decreases, this shift being sensitive to NW sidewall oxidation. The wavevector necessary to activate SO phonon was used to estimate the NW facet roughness responsible for SO shiftG. Shen and C. Garcıa Nuñez acknowledge the support of the Alabama EPSCoR GRSP and the FPI-MINECO 2012 grant, respectively. This work used the Central Analytical Facility and SIdI, which are supported by the University of Alabama and Universidad Autónoma de Madrid, respectively.This research was supported by the Spanish Ministry of Economy and Competitiveness TEC2010-20796 projectAIP Publishing LLC.Departamento de Física AplicadaFacultad de CienciasElectrónica y Semiconductores (EXP C-032)20142014-01-21research articlehttp://purl.org/coar/resource_type/c_2df8fbb1VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10486/665971https://dx.doi.org/10.1063/1.4862742reponame:Biblos-e Archivo. Repositorio Institucional de la UAMinstname:Universidad Autónoma de MadridInglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:repositorio.uam.es:10486/6659712026-06-23T12:46:27Z
dc.title.none.fl_str_mv Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy
title Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy
spellingShingle Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy
García Núñez, Carlos
III-V semiconductors
Phonons
Crystal defects
Semiconductor growth
Fluid drops
Física
title_short Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy
title_full Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy
title_fullStr Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy
title_full_unstemmed Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy
title_sort Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy
dc.creator.none.fl_str_mv García Núñez, Carlos
Braña de Cal, Alejandro Francisco
Pau Vizcaíno, José Luis
Ghita, D.
García Carretero, Basilio Javier
Shen, G.
Wilbert, D.S.
Kim, S.M.
Kung, P.
author García Núñez, Carlos
author_facet García Núñez, Carlos
Braña de Cal, Alejandro Francisco
Pau Vizcaíno, José Luis
Ghita, D.
García Carretero, Basilio Javier
Shen, G.
Wilbert, D.S.
Kim, S.M.
Kung, P.
author_role author
author2 Braña de Cal, Alejandro Francisco
Pau Vizcaíno, José Luis
Ghita, D.
García Carretero, Basilio Javier
Shen, G.
Wilbert, D.S.
Kim, S.M.
Kung, P.
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Departamento de Física Aplicada
Facultad de Ciencias
Electrónica y Semiconductores (EXP C-032)
dc.subject.none.fl_str_mv III-V semiconductors
Phonons
Crystal defects
Semiconductor growth
Fluid drops
Física
topic III-V semiconductors
Phonons
Crystal defects
Semiconductor growth
Fluid drops
Física
description The following article appeared in Journal of Applied Physics 115.3 (2014): 034307 and may be found at (http://scitation.aip.org/content/aip/journal/jap/115/3/10.1063/1.4862742)
publishDate 2014
dc.date.none.fl_str_mv 2014
2014-01-21
dc.type.none.fl_str_mv research article
http://purl.org/coar/resource_type/c_2df8fbb1
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10486/665971
https://dx.doi.org/10.1063/1.4862742
url http://hdl.handle.net/10486/665971
https://dx.doi.org/10.1063/1.4862742
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AIP Publishing LLC.
publisher.none.fl_str_mv AIP Publishing LLC.
dc.source.none.fl_str_mv reponame:Biblos-e Archivo. Repositorio Institucional de la UAM
instname:Universidad Autónoma de Madrid
instname_str Universidad Autónoma de Madrid
reponame_str Biblos-e Archivo. Repositorio Institucional de la UAM
collection Biblos-e Archivo. Repositorio Institucional de la UAM
repository.name.fl_str_mv
repository.mail.fl_str_mv
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