Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions

All‐sputtered CuInSe2/CdS solar cellheterojunctions have been analyzed by means of capacitance‐frequency (C‐F) and capacitance‐bias voltage (C‐V) measurements. Depending on the CuInSe2 layer composition, two kinds of heterojunctions were analyzed: type 1 heterojunctions (based on stoichiometric or s...

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Authors: Martil De La Plaza, Ignacio, González Díaz, Germán, Sánchez Quesada, Francisco, Santamaría Sánchez-Barriga, Jacobo, Iborra, E.
Format: article
Publication Date:1989
Country:España
Institution:Universidad Complutense de Madrid (UCM)
Repository:Docta Complutense
Language:English
OAI Identifier:oai:docta.ucm.es:20.500.14352/59315
Online Access:https://hdl.handle.net/20.500.14352/59315
Access Level:Open access
Keyword:537
Physics
Applied.
Electricidad
Electrónica (Física)
2202.03 Electricidad
id ES_266d15a832d5e330cd49d2c67d99f3cf
oai_identifier_str oai:docta.ucm.es:20.500.14352/59315
network_acronym_str ES
network_name_str España
repository_id_str
spelling Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctionsMartil De La Plaza, IgnacioGonzález Díaz, GermánSánchez Quesada, FranciscoSantamaría Sánchez-Barriga, JacoboIborra, E.537PhysicsApplied.ElectricidadElectrónica (Física)2202.03 ElectricidadAll‐sputtered CuInSe2/CdS solar cellheterojunctions have been analyzed by means of capacitance‐frequency (C‐F) and capacitance‐bias voltage (C‐V) measurements. Depending on the CuInSe2 layer composition, two kinds of heterojunctions were analyzed: type 1 heterojunctions (based on stoichiometric or slightly In‐rich CuInSe2 layers) and type 2 heterojunctions (based on Cu‐rich CuInSe2 layers). In type 1 heterojunctions, a 80‐meV donor level has been found. Densities of interface states in the range 101 0–101 1 cm2 eV− 1 (type 1) and in the range 101 2–101 3 cm− 2 eV− 1 (type 2) have been deduced. On the other hand, doping concentrations of 1.6×101 6 cm− 3 for stoichiometric CuInSe2 (type 1 heterojunction) and 8×101 7 cm− 3 for the CdS (type 2 heterojunction) have been deduced from C‐Vmeasurements.American Institute of PhysicsUniversidad Complutense de Madrid19891989-04-1519891989-04-15journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/59315reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/593152026-06-02T12:44:21Z
dc.title.none.fl_str_mv Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions
title Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions
spellingShingle Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions
Martil De La Plaza, Ignacio
537
Physics
Applied.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions
title_full Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions
title_fullStr Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions
title_full_unstemmed Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions
title_sort Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions
dc.creator.none.fl_str_mv Martil De La Plaza, Ignacio
González Díaz, Germán
Sánchez Quesada, Francisco
Santamaría Sánchez-Barriga, Jacobo
Iborra, E.
author Martil De La Plaza, Ignacio
author_facet Martil De La Plaza, Ignacio
González Díaz, Germán
Sánchez Quesada, Francisco
Santamaría Sánchez-Barriga, Jacobo
Iborra, E.
author_role author
author2 González Díaz, Germán
Sánchez Quesada, Francisco
Santamaría Sánchez-Barriga, Jacobo
Iborra, E.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Physics
Applied.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Physics
Applied.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description All‐sputtered CuInSe2/CdS solar cellheterojunctions have been analyzed by means of capacitance‐frequency (C‐F) and capacitance‐bias voltage (C‐V) measurements. Depending on the CuInSe2 layer composition, two kinds of heterojunctions were analyzed: type 1 heterojunctions (based on stoichiometric or slightly In‐rich CuInSe2 layers) and type 2 heterojunctions (based on Cu‐rich CuInSe2 layers). In type 1 heterojunctions, a 80‐meV donor level has been found. Densities of interface states in the range 101 0–101 1 cm2 eV− 1 (type 1) and in the range 101 2–101 3 cm− 2 eV− 1 (type 2) have been deduced. On the other hand, doping concentrations of 1.6×101 6 cm− 3 for stoichiometric CuInSe2 (type 1 heterojunction) and 8×101 7 cm− 3 for the CdS (type 2 heterojunction) have been deduced from C‐Vmeasurements.
publishDate 1989
dc.date.none.fl_str_mv 1989
1989-04-15
1989
1989-04-15
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/59315
url https://hdl.handle.net/20.500.14352/59315
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869404821072642048
score 15,301603

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