Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering
CuGaxIn1-xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x = 0.25, x = 0.5, and x = 0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at substrates temperatures higher than 350-degrees-C. We...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1992 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/59311 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/59311 |
| Access Level: | acceso abierto |
| Palabra clave: | 537 Physics Applied. Electricidad Electrónica (Física) 2202.03 Electricidad |
| Sumario: | CuGaxIn1-xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x = 0.25, x = 0.5, and x = 0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at substrates temperatures higher than 350-degrees-C. We have successfully obtained chalcopyrite single phase stoichiometric films. Very sharp absorption edges are obtained, with band gaps of 1.12, 1.35, and 1.51 eV for x = 0, x = 0.5, and x = 0.75, respectively. |
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