Impact of the temperature on the conductive filament morphology in HfO2-based RRAM
In this letter, we study the impact of the temperature on the resistive switching effect of TiN/Ti/HfO<inf>2</inf>/W metal–insulator-metal devices. An analysis of the conduction mechanisms is made, with the low resistance state being ruled by nearest neighbor hopping, while the conductio...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/396133 |
| Acceso en línea: | http://hdl.handle.net/10261/396133 https://api.elsevier.com/content/abstract/scopus_id/85180406478 |
| Access Level: | acceso abierto |
| Palabra clave: | Conductive filament | Hopping | Resistive switching | Schottky emission | Temperature dependence http://metadata.un.org/sdg/9 Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation |
| Sumario: | In this letter, we study the impact of the temperature on the resistive switching effect of TiN/Ti/HfO<inf>2</inf>/W metal–insulator-metal devices. An analysis of the conduction mechanisms is made, with the low resistance state being ruled by nearest neighbor hopping, while the conduction in the high resistance state is dominated by Schottky emission. Taking into account the filamentary mechanism behind the resistive switching effect, a thorough analysis of the Schottky emission allows for the calculation of the gap between conductive filament tip and metal electrode in the high resistance state. We report an increase of this gap when temperature lowers below a certain value. Moreover, the mentioned gap adopts values of integer multiples of the the mean distance between traps obtained by the hopping model. |
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